Datasheet > BC847CSTB6

BC847CSTB6

更新时间： 2024-01-11 04:05:30

品牌	Logo	应用领域
强茂 - PANJIT		晶体晶体管
页数	文件大小	规格书
6页	413K
描述
DUAL NPN GENERAL PURPOSE TRANSISTOR

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BC847CSTB6 数据手册

BC847CSTB6

DUAL NPN GENERAL PURPOSE TRANSISTOR

210 mWatts

45Volts

POWER

VOLTAGE

FEATURES

• NPN epitaxial silicon, planar design

• Collector-emitter voltage VCE = 45V

• Collector current IC = 100mA

•

Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (HalogenFree)

MECHANICALDATA

• Case: SOT-563, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.003 grams

• Marking: T7

ABSOLUTERATINGS

PARAMETER

SYMBOL

VALUE

UNITS

Collector - Emitter Voltage

VCEO

Collector - Base Voltage

Emitter - Base Voltage

VCBO

VEBO

I C

6.0

100

Collector Current - Continuous

THERMALCHARACTERISTICS

PARAMETER

SYMBOL

P_TOT

VALUE

UNITS

Max Power Dissipation (Note 1)

210

590

Thermal Resistance , Junction to Ambient (Note 1)

R_JA

^OC/W

^OC

Operating Junction Temperature and Storage Temperature Range

T_J,T_STG

-55 to 150

Note

1: Mounted on 1cm²minimum pad PCB.

April 23,2012-REV.00

PAGE . 1

12 3 4 5 6

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