Datasheet > BC847CDXV6T1D

BC847CDXV6T1D

更新时间： 2024-11-25 06:41:39

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
5页	91K
描述
Dual General Purpose Transistors

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中文翻译

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数据手册

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BC847CDXV6T1D 数据手册

BC847CDXV6T1,

BC847CDXV6T5

BC848CDXV6T1,

BC848CDXV6T5

Dual General Purpose

Transistors

http://onsemi.com

(3)

(2)

(1)

NPN Duals

These transistors are designed for general purpose amplifier

applications. They are housed in the SOT−563 which is designed for

low power surface mount applications.

(4)

(5)

(6)

Features

BC847CDXV6T1

• These are Pb−Free Devices

MAXIMUM RATINGS

Rating

Symbol

BC847 BC848

Unit

Collector − Emitter Voltage

Collector − Base Voltage

Emitter − Base Voltage

Collector Current − Continuous

CEO

CBO

EBO

6.0

100

5.0

100

SOT−563

CASE 463A

PLASTIC

mAdc

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

MARKING DIAGRAMS

THERMAL CHARACTERISTICS

Characteristic

(One Junction Heated)

Symbol

Max

Unit

Total Device Dissipation, (Note 1)

1x M G

T = 25°C

357

2.9

mW/°C

Derate above 25°C

Thermal Resistance,

350

°C/W

Junction-to-Ambient (Note 1)

1x = Device Code

x = G or M

Characteristic

(Both Junctions Heated)

Symbol

Max

Unit

= Date Code

Total Device Dissipation, (Note 1)

= Pb−Free Package

T = 25°C

Derate above 25°C

500

4.0

mW/°C

(Note: Microdot may be in either location)

Thermal Resistance,

250

°C/W

Junction-to-Ambient (Note 1)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Junction and Storage

Temperature Range

T , T

−55 to +150

°C

stg

1. FR−4 @ Minimum Pad

Publication Order Number:

October, 2010 − Rev. 2

BC847CDXV6T1/D

12 3 4 5

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