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BC847B PDF预览

BC847B

更新时间: 2024-02-29 09:35:33
品牌 Logo 应用领域
TYSEMI 晶体晶体管光电二极管IOT
页数 文件大小 规格书
2页 67K
描述
Low current (max. 100 mA). Low voltage (max. 65 V). Collector-base voltage VCBO 80 V

BC847B 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:compliant风险等级:5.84
JESD-609代码:e3端子面层:Matte Tin (Sn)
Base Number Matches:1

BC847B 数据手册

 浏览型号BC847B的Datasheet PDF文件第2页 
TransistIoCrs  
Product specification  
BC846,BC847,BC848  
SOT-23  
Unit: mm  
+0.1  
2.9  
-0.1  
+0.1  
0.4  
-0.1  
3
Features  
Low current (max. 100 mA).  
Low voltage (max. 65 V).  
1
2
+0.1  
0.95  
-0.1  
+0.05  
0.1  
-0.01  
+0.1  
1.9  
-0.1  
1.Base  
2.Emitter  
3.collector  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector-base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
BC846  
BC847  
BC848  
Unit  
V
80  
65  
6
50  
45  
30  
30  
5
Collector-emitter voltage  
Emitter-base voltage  
V
6
V
100  
Collector current  
mA  
mA  
mA  
mW  
200  
Peak collector current  
ICM  
200  
Peak base current  
IBM  
250  
Total power dissipation *  
Junction temperature  
Ptot  
150  
Tj  
-65 to +150  
-65 to +150  
500  
Storage temperature  
Tstg  
Operating ambient temperature  
Thermal resistance from junction to ambient *  
Ramb  
Rth j-a  
K/W  
* Transistor mounted on an FR4 printed-circuit board, standard footprint.  
http://www.twtysemi.com  
1 of 2  
sales@twtysemi.com  
4008-318-123  

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