Datasheet > BC847A-Z1E

BC847A-Z1E

更新时间： 2024-11-14 22:15:31

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描述
SOT23 NPN SILICON PLANAR

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数据手册

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BC847A-Z1E 数据手册

BC846

BC848

BC850

BC847

BC849

SOT23 NPN SILICON PLANAR

GENERAL PURPOSE TRANSISTORS

ISSUE 6 - JANUARY 1997

PARTMARKING DETAILS

BC846AZ1A BC848B1K

COMPLEMENTARY TYPES

BC846

BC847

BC848

BC849

BC850

BC856

BC857

BC858

BC859

BC860

BC846B1B

BC847AZ1E BC849B2B

BC847B1F BC849C2C

BC847C1GZ BC850B2FZ

BC848A1JZ BC850C-Z2G

BC848CZ1L

SOT23

ABSOLUTE MAXIMUM RATINGS.

UNIT

PARAMETER

SYMBOL

BC846

BC847

BC848

BC849

BC850

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Collector Current

Peak Base Current

V_CBO

V_CES

V_CEO

V_EBO

I_C

100

200

330

°C

I_CM

I_BM

Peak Emitter Current

Power Dissipation at T_amb=25°C

I_EM

P_tot

Operating and Storage

Temperature Range

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

UNIT CONDITIONS.

BC846 BC847 BC848 BC849 BC850

PARAMETER

SYMBOL

Collector Cut-Off Current I_CBO

Max

V_CB= 30V

_CB= 30V

T_amb=150°C

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)Typ

Max.

250

mV I_C=10mA,

mV I_B=0.5mA

Typ

Max.

200

600

mV I_C=100mA,

mV I_B=5mA

Typ

Max.

300

600

mV I_C=10mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

700

mV I_C=10mA,

I_B=0.5mA

Typ

900

mV I_C=100mA,

I_B=5mA

Typ

Base-Emitter Voltage

V_BE

580

660

700

mV I_C=2mA

mV V_CE=5V

Min

Typ

Max

770

mV I_C=10mA

V_CE=5V

Max

* Collector-Emitter Saturation Voltage at I_C= 10mA for the characteristics going through the

operating point I_C= 11mA, V_CE= 1V at constant base current.

12 3

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