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BC846CMTF_NL PDF预览

BC846CMTF_NL

更新时间: 2024-11-07 21:13:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关光电二极管晶体管
页数 文件大小 规格书
5页 99K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon, LEAD FREE PACKAGE-3

BC846CMTF_NL 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:5.18最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):420JESD-30 代码:R-PDSO-G3
JESD-609代码:e3元件数量:1
端子数量:3封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzBase Number Matches:1

BC846CMTF_NL 数据手册

 浏览型号BC846CMTF_NL的Datasheet PDF文件第2页浏览型号BC846CMTF_NL的Datasheet PDF文件第3页浏览型号BC846CMTF_NL的Datasheet PDF文件第4页浏览型号BC846CMTF_NL的Datasheet PDF文件第5页 
August 2006  
BC846- BC850  
NPN Epitaxial Silicon Transistor  
tm  
Features  
Switching and Amplifier Applications  
Suitable for automatic insertion in thick and thin-film circuits  
Low Noise: BC849, BC850  
3
Complement to BC856 ... BC860  
2
SOT-23  
1
1. Base 2. Emitter 3. Collector  
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
: BC846  
: BC847/850  
: BC848/849  
80  
50  
30  
V
V
V
VCEO  
Collector-Emitter Voltage : BC846  
: BC847/850  
65  
45  
30  
V
V
V
: BC848/849  
VEBO  
Emitter-Base Voltage  
: BC846/847  
: BC848/849/850  
6
5
V
V
IC  
Collector Current (DC)  
100  
310  
mA  
mW  
°C  
PC  
TJ  
Collector Power Dissipation  
Junction Temperature  
Storage Temperature  
150  
TSTG  
-65 ~ 150  
°C  
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
Electrical Characteristics* Ta=25°C unless otherwise noted  
Symbol  
Parameter  
Collector Cut-off Current  
DC Current Gain  
Test Condition  
Min.  
Typ.  
Max.  
15  
Units  
ICBO  
VCB=30V, IE=0  
nA  
hFE  
VCE=5V, IC=2mA  
110  
800  
VCE (sat)  
Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA  
IC=100mA, IB=5mA  
90  
200  
250  
600  
mV  
mV  
VBE (sat)  
VBE (on)  
fT  
Collector-Base Saturation Voltage  
IC=10mA, IB=0.5mA  
IC=100mA, IB=5mA  
700  
900  
mV  
mV  
Base-Emitter On Voltage  
VCE=5V, IC=2mA  
VCE=5V, IC=10mA  
580  
660  
700  
720  
mV  
mV  
Current Gain Bandwidth Product  
VCE=5V, IC=10mA,  
f=100MHz  
300  
MHz  
Cob  
Cib  
NF  
Output Capacitance  
Input Capacitance  
VCB=10V, IE=0, f=1MHz  
VEB=0.5V, IC=0, f=1MHz  
3.5  
9
6
pF  
pF  
Noise Figure  
: BC846/847/848  
: BC849/850  
VCE= 5V, IC= 200µA  
RG=2KΩ, f=1KHz  
2
1.2  
10  
4
dB  
dB  
: BC849  
: BC850  
VCE= 5V, IC= 200µA  
RG=2K, f=30~15000Hz  
1.4  
1.4  
4
3
dB  
dB  
* Pulse Test: Pulse Width300µs, Duty Cycle2%  
©2006 Fairchild Semiconductor Corporation  
BC846- BC850 Rev. B  
1
www.fairchildsemi.com  

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