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BC846C(SOT-23) PDF预览

BC846C(SOT-23)

更新时间: 2024-01-13 05:42:30
品牌 Logo 应用领域
友顺 - UTC 开关光电二极管晶体管
页数 文件大小 规格书
4页 102K
描述
Small Signal Bipolar Transistor, 0.1A I(C), NPN

BC846C(SOT-23) 技术参数

生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:compliant风险等级:5.8
最大集电极电流 (IC):0.1 A集电极-发射极最大电压:65 V
配置:SINGLE最小直流电流增益 (hFE):420
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:NPN
最大功率耗散 (Abs):0.31 W子类别:Other Transistors
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

BC846C(SOT-23) 数据手册

 浏览型号BC846C(SOT-23)的Datasheet PDF文件第2页浏览型号BC846C(SOT-23)的Datasheet PDF文件第3页浏览型号BC846C(SOT-23)的Datasheet PDF文件第4页 
UTC BC846/BC847/BC848/BC849/BC850  
NPN EPITAXIAL SILICON TRANSISTOR  
SWITCHING AND AMPLIFIER  
APPLICATION  
FEATURES  
*Suitable for automatic insertion in thick and thin-film  
circuits.  
*Complement to BC856 … BC860  
2
1
3
SOT-23  
1: EMITTER 2: BASE 3: COLLECTOR  
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise noted)  
PARAMETER  
SYMBOL  
VALUE  
UNIT  
Collector-Base Voltage  
VCBO  
BC846  
80  
50  
30  
V
V
V
BC847 / BC850  
BC848 / BC849  
Collector-Emitter Voltage  
VCEO  
VEBO  
BC846  
65  
45  
30  
V
V
BC847 / BC850  
BC848 / BC849  
Emitter-Base Voltage  
BC846 / BC847  
BC848 / BC849 / BC850  
6
5
V
V
Collector Current (DC)  
Ic  
Pc  
Tj  
100  
310  
150  
mA  
mW  
°C  
Collector Dissipation  
Junction Temperature  
Storage Temperature  
Tstg  
-65 ~ +150  
°C  
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise noted)  
PARAMETER  
Collector Cut-Off Current  
DC Current Gain  
SYMBOL  
ICBO  
TEST CONDITIONS  
VCB=30V, IE=0  
VCE=5.0V, Ic=2.0mA  
MIN  
TYP  
MAX UNITS  
15  
nA  
hFE  
110  
800  
250  
600  
Collector-Emitter Saturation  
VCE(sat) Ic=10mA,IB=0.5mA  
90  
200  
mV  
mV  
Voltage  
Ic=100mA,IB=5.0mA  
1
UTC UNISONIC TECHNOLOGIES CO. LTD  
QW-R206-027,A  

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