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BC846BWT1 PDF预览

BC846BWT1

更新时间: 2024-11-24 22:20:11
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
4页 183K
描述
General Purpose Transistors(NPN Silicon)

BC846BWT1 技术参数

生命周期:Contact Manufacturer包装说明:,
Reach Compliance Code:unknown风险等级:5.25
Is Samacsys:N最大集电极电流 (IC):0.1 A
配置:Single最小直流电流增益 (hFE):200
极性/信道类型:NPN最大功率耗散 (Abs):0.15 W
子类别:Other Transistors表面贴装:YES
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC846BWT1 数据手册

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LESHAN RADIO COMPANY, LTD.  
GeneralPurposeTransistors  
NPN Silicon  
BC846AWT1,BWT1  
BC847AWT1,BWT1  
CWT1  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT–323/SC–70 which is  
designed for low power surface mount applications.  
3
COLLECTOR  
BC848AWT1,BWT1  
CWT1  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS  
3
Rating  
Symbol  
V CEO  
V CBO  
V EBO  
I C  
BC846  
65  
BC847  
45  
BC848  
Unit  
V
1
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Collector Current — Continuous  
30  
30  
2
80  
50  
V
CASE 419–02, STYLE 3  
SOT–323 /SC–70  
6.0  
6.0  
5.0  
100  
V
100  
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation FR– 5 Board, (1)  
TA = 25°C  
P D  
150  
mW  
Thermal Resistance, Junction to Ambient  
Total Device Dissipation  
R θJA  
P D  
833  
2.4  
°C/W  
mW/°C  
°C  
Junction and Storage Temperature  
T J , T stg  
–55 to +150  
DEVICE MARKING  
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;  
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(IC = 10 mA)  
BC846 Series  
BC847 Series  
BC848 Series  
BC846 Series  
BC847 Series  
BC848 Series  
BC846 Series  
BC847 Series  
BC848 Series  
BC846 Series  
BC847 Series,  
BC848 Series  
65  
45  
30  
80  
50  
30  
80  
50  
30  
6.0  
6.0  
5.0  
15  
5.0  
V (BR)CEO  
V (BR)CES  
V (BR)CBO  
v
v
v
v
Collector–Emitter Breakdown Voltage  
(IC = 10 µA, VEB = 0)  
Collector–Base Breakdown Voltage  
(IC = 10 µA)  
Emitter–Base Breakdown Voltage  
(IE = 1.0 µA)  
V (BR)EBO  
Collector Cutoff Current (VCB = 30 V)  
nA  
I CBO  
(VCB = 30 V, TA = 150°C)  
µA  
1.FR–5=1.0 x 0.75 x 0.062in  
K4–1/4  

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