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BC846ATR

更新时间: 2024-11-25 13:05:55
品牌 Logo 应用领域
CENTRAL 晶体小信号双极晶体管开关光电二极管
页数 文件大小 规格书
2页 345K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1-Element, NPN, Silicon,

BC846ATR 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:not_compliantHTS代码:8541.21.00.95
风险等级:5.02其他特性:LOW NOISE
最大集电极电流 (IC):0.1 A基于收集器的最大容量:2.5 pF
集电极-发射极最大电压:65 V配置:SINGLE
最小直流电流增益 (hFE):110JESD-30 代码:R-PDSO-G3
JESD-609代码:e0元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN最大功率耗散 (Abs):0.35 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHzVCEsat-Max:0.6 V
Base Number Matches:1

BC846ATR 数据手册

 浏览型号BC846ATR的Datasheet PDF文件第2页 
BC846 SERIES  
BC847 SERIES  
BC848 SERIES  
www.centralsemi.com  
DESCRIPTION:  
SURFACE MOUNT  
The CENTRAL SEMICONDUCTOR BC846, BC847  
and BC848 Series types are NPN Silicon Transistors  
manufactured by the epitaxial planar process, epoxy  
molded in a surface mount package, designed for  
general purpose switching and amplifier applications.  
NPN SILICON TRANSISTOR  
MARKING CODE: SEE MARKING CODE TABLE  
ON FOLLOWING PAGE  
Note: Reverse Lead Codes Available, Add “R” to  
the end of the Part # and Marking Code.  
SOT-23 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
BC848  
30  
30  
BC847  
50  
45  
5.0  
100  
200  
200  
350  
BC846  
80  
65  
UNITS  
V
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Continuous Collector Current  
Peak Collector Current  
Peak Base Current  
Power Dissipation  
Operating and Storage Junction Temperature  
Thermal Resistance  
V
V
V
CBO  
CEO  
EBO  
C
CM  
V
I
mA  
mA  
mA  
mW  
°C  
I
I
BM  
P
D
T , T  
-65 to +150  
357  
J
stg  
Θ
°C/W  
JA  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
MAX  
15  
5.0  
UNITS  
I
I
I
V
V
V
=30V  
=30V, T =150°C  
=5.0V  
nA  
μA  
nA  
V
V
V
V
V
V
V
CBO  
CBO  
EBO  
CB  
CB  
EB  
A
100  
BV  
BV  
BV  
BV  
BV  
BV  
BV  
I =10μA (BC848)  
30  
50  
80  
30  
45  
65  
5.0  
CBO  
CBO  
CBO  
CEO  
CEO  
C
I =10μA (BC847)  
C
I =10μA (BC846)  
C
I =10mA (BC848)  
C
I =10mA (BC847)  
C
I =10mA (BC846)  
CEO  
EBO  
C
I =10μA  
E
V
V
V
V
I =10mA, I =0.5mA  
0.25  
0.60  
0.70  
0.77  
V
V
V
V
CE(SAT)  
CE(SAT)  
BE(ON)  
BE(ON)  
C
B
B
CE  
CE  
C
C
I =100mA, I =5.0mA  
C
I =2.0mA, V =5.0V  
0.58  
100  
C
I =10mA, V =5.0V  
C
f
V
=5.0V, I =10mA, f=100MHz  
MHz  
T
CE  
CE  
NF  
V
=5.0V, I =200μA,  
R =2.0KΩ, f=1.0KHz, BW=200Hz  
10  
dB  
S
BC846A  
BC847A  
BC848A  
BC846B  
BC847B  
BC848B  
BC847C  
BC848C  
MIN MAX  
110 220  
MIN MAX  
MIN  
420  
MAX  
800  
h
V
=5.0V, I =2.0mA  
200  
450  
FE  
CE  
C
R1 (20-November 2009)  

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