BC818-40-TP

更新时间： 2024-01-18 10:43:15

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管开关光电二极管
页数	文件大小	规格书
3页	233K
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数据手册

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BC818-40-TP 数据手册

BC818-16

BC818-25

BC818-40

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

NPN Silicon

General Purpose

Transistors

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Capable of 0.3Watts of Power Dissipation.

Collector-current 0.5A

•

Collector-base Voltage 30V

Operating and storage junction temperature range: -55^OC to +150^OC

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

SOT-23

Mechanical Data

•

Case: SOT-23 Molded Plastic

Terminals: Solderable per MIL-STD-202, Method 208

Weight: 0.008 grams (approx.)

Device Marking:

BC818-16

BC818-25

BC818-40

Electrical Characteristics @ 25^OC Unless Otherwise Specified

Symbol

Parameter

Min

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=10mAdc, I_B=0)

Collector-Base Breakdown Voltage

(I_C=10uAdc, I_E=0)

Collector-Emitter Breakdown Voltage

(I_E=10uAdc, I _C=0)

Collector Cutoff Current

(V_CB=25Vdc,I_E=0)

Emitter Cutoff Current

5.0

---

Vdc

DIMENSIONS

INCHES

MIN

---

Vdc

DIM

MAX

MIN

2.80

2.10

1.20

.89

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

.110

.083

.047

.035

.070

.018

.120

.098

.055

.041

.081

.024

.0039

.044

.007

.020

0.1

uAdc

I_EBO

---

1.78

.45

(V_EB=4.0Vdc, I _C=0)

.0005

.035

.003

.015

.013

.89

ON CHARACTERISTICS

h_FE(1)

.085

.37

DC Current Gain

(I_C=100mAdc, V_CE=1.0Vdc)

BC818-16

BC818-25

BC818-40

DC Current Gain

(I_C=300mAdc, V_CE=1.0Vdc)

Collector-Emitter Saturation Voltage

(I_C=500mAdc, I_B=50mAdc)

Base-Emitter Saturation Voltage

(I_C=500mAdc,I_B=50mAdc)

100

160

250

---

250

400

630

---

Vdc

Suggested Solder

Pad Layout

.031

.800

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

---

.035

.900

0.7

1.2

.079

2.000

inches

Base-Emitter Voltage

(V_CE=1Vdc,I_C=500mAdc)

.037

.950

SMALL SIGNAL CHARACTERISTICS

.037

.950

f_T

Transition frequency

170

---

MHz

(V_CE=5.0V, f=100MHz, I _C=50mA)

Collector output capacitance

(V_CB=10V, f=1MHz)

C_ob

www.mccsemi.com

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Revision: A

2011/01/01

12 3

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