Datasheet > BC817

BC817

更新时间： 2023-12-06 19:51:58

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	1498K
描述
SOT-23

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中文翻译

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数据手册

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BC817 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

T-23

BC817

TRANSISTOR (NPN)

1. BASE

FEATURES

2. EMITTER

3. COLLECTOR

For general AF applications

High collector current

High current gain

Low collector-emitter saturation voltage

Complementary types: BC807 (PNP)

MARKING

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

500

300

417

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

6A / 6B / 6C=Device code

Operation Junction and

Storage Temperature Range

Solid dot = Green molding compound device

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

I_CBO

Test conditions

I_C= 10μA, I_E=0

Min

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 10mA, I_B=0

I_E= 1μA, I_C=0

μA

V_CB= 45 V , I_E=0

0.1

600

μA

Emitter cut-off current

I_EBO

V_EB= 4V, I_C=0

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

V_CE= 1V, I_C= 100mA

V_CE= 1V, I_C= 500mA

I_C= 500mA, I_B= 50mA

V_CE= 1 V, I_C= 500mA

V_CB=10V ,f=1MHz

100

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.7

1.2

Collecter capactiance

C_ob

_CE= 5 V, I_C= 10mA

Transition frequency

f_T

100

MHz

f=100MHz

CLASSIFICATION OF h_FE

(1)

Rank

Range

Marking

BC817-16

BC817-25

160-400

BC817-40

100-250

250-600

www.jscj-elec.com

Rev. - 2.1

12 3 4

中文翻译

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BC817,215	NXP	获取价格	BC817; BC817W; BC337 - 45 V, 500 mA NPN general-purpose transistors TO-236 3-Pin
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BC817.16TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon,
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BC817.25	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 500MA I(C) \| TO-236AA
BC817.25TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon,
BC817.25TR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon,
BC817.40	ETC	获取价格	TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 500MA I(C) \| TO-236AA