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BC817-40 PDF预览

BC817-40

更新时间: 2024-06-26 08:51:39
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
3页 393K
描述
三极管

BC817-40 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.55
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):40JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:NPN
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC817-40 数据手册

 浏览型号BC817-40的Datasheet PDF文件第2页浏览型号BC817-40的Datasheet PDF文件第3页 
R
UMW  
UMW BC817  
SOT-23 Plastic-Encapsulate Transistors  
T-23  
SO  
BC817  
TRANSISTOR (NPN)  
1. BASE  
FEATURES  
2. EMITTER  
3. COLLECTOR  
z
z
z
z
z
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
Complementary types: BC807 (PNP)  
MAXIMUM RATINGS (Ta=25unless otherwise noted)  
Symbol  
Parameter  
Value  
Unit  
V
VCBO  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
VCEO  
VEBO  
IC  
45  
V
5
V
Collector Current -Continuous  
Collector Power Dissipation  
Junction Temperature  
0.5  
A
PC  
0.3  
W
Tj  
150  
-55-150  
Tstg  
Storage Temperature  
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
ICBO  
Test conditions  
IC= 10μA, IE=0  
Min  
50  
45  
5
Typ  
Max  
Unit  
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cut-off current  
IC= 10mA, IB=0  
V
IE= 1μA, IC=0  
V
μA  
VCB= 45 V , IE=0  
0.1  
0.1  
600  
μA  
Emitter cut-off current  
IEBO  
VEB= 4V, IC=0  
hFE(1)  
hFE(2)  
VCE(sat)  
VBE(sat)  
VBE  
VCE= 1V, IC= 100mA  
VCE= 1V, IC= 500mA  
IC= 500mA, IB= 50mA  
IC= 500mA, IB= 50mA  
VCE= 1 V, IC= 500mA  
VCB=10V ,f=1MHz  
100  
40  
DC current gain  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter voltage  
0.7  
1.2  
1.2  
V
V
V
10  
Collecter capactiance  
Cob  
pF  
VCE= 5 V, IC= 10mA  
f=100MHz  
Transition frequency  
fT  
100  
MHz  
CLASSIFICATION OF hFE  
(1)  
Rank  
Range  
Marking  
BC817-16  
BC817-25  
160-400  
6B  
BC817-40  
100-250  
6A  
250-600  
6C  
www.umw-ic.com  
1
友台半导体有限公司  

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