Datasheet > BC817-25RFG

BC817-25RFG

更新时间： 2022-02-26 11:40:51

品牌	Logo	应用领域
TSC		/
页数	文件大小	规格书
4页	255K
描述
300mW, NPN Small Signal Transistor

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

BC817-25RFG 数据手册

BC817-16/-25/-40

Taiwan Semiconductor

Small Signal Product

300mW, NPN Small Signal Transistor

FEATURES

- Low power loss, high current capability, low VF

- Surface mount device type

- Moisture sensitivity level 1

- Matte Tin(Sn) lead finish with Nickel(Ni) underplate

- Pb free and RoHS complian

- Packing code with suffix "G" means

green compound (halogen-free)

SOT-23

MECHANICAL DATA

- Case: SOT- 23 small outline plastic package

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260°C/10s

- Weight: 8mg (approximately)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T_A=25℃ unless otherwise noted)

PARAMETER

VALUE

SYMBOL

P_D

UNIT

Power dissipation

300

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

V_CBO

V_CEO

V_EBO

I_C

500

°C

Thermal Resistance (Junction to Ambient)

Junction Temperature

R_θJA

T_J

417

150

°C

Storage Temperature Range

T_STG

-55 to +150

°C

Notes: 1. Valid provided that electrodes are kept at ambient temperature

PARAMETER

BC817-16 BC817-25 BC817-40

SYMBOL

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

UNIT

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cut-off Current

I_C= 10μA

I_C= 10mA

I_E= 1μA

I_E= 0

I_B= 0

I_C= 0

I_E= 0

I_C= 0

V_CB= 45V

V_EB= 4V

0.1

0.7

1.2

100

μA

Emitter Cut-off Current

I_EBO

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Transition Frequency

I_C= 500mA I_B= 50 mA

V_CE(sat)

V_BE(sat)

f_T

V_CE= 5V I_C= 10mA

f= 100MHz

f= 1.0MHz

I_C= 100mA

MHz

V_CB=10V

V_CE= 1V

C_CBO

Junction Capacitance

100

>40

400

160

600

250

h_FE

DC Current Gain

h_FE

100-250

160-400

250-600

DC Current Gain

Min. DC Current Gain

Vce=1V

Ic=500mA

Document Number: DS_S1404005

Version: H15

12 3 4

下载PDF

与BC817-25RFG相关器件

型号	品牌	描述	获取价格	数据表
BC817-25S62Z	FAIRCHILD	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23,	获取价格
BC817-25T/R	NXP	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BI	获取价格
BC817-25T116	ROHM	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon	获取价格
BC817-25T117	ROHM	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon	获取价格
BC817-25T216	ROHM	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, MINIMOL	获取价格
BC817-25-TAPE-13	NXP	TRANSISTOR 500 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, BIP General Purpose Small Signa	获取价格