Datasheet > BC817-16

BC817-16

更新时间： 2024-10-01 08:49:39

品牌	Logo	应用领域
金誉半导体 - HTSEMI		晶体晶体管
页数	文件大小	规格书
2页	279K
描述
TRANSISTOR (NPN)

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中文翻译

获取价格

数据手册

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BC817-16 数据手册

BC817

TRANSISTOR (NPN)

BC817-16

BC817-25

BC817-40

SOT-23

FEATURES

1. BASE

For general AF applications

High collector current

High current gain

2. EMITTER

3. COLLECTOR

Low collector-emitter saturation voltage

Complementary types: BC807 (PNP)

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

Parameter

Value

Units

V_CBO

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

V_CEO

V_EBO

I_C

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

0.5

P_C

0.3

℃

150

-55-150

T_stg

Storage Temperature

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

V_CBO

Test

conditions

MIN

MAX

UNIT

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C= 10μA, I_E=0

V_CEO

I_C= 10mA, I_B=0

V_EBO

I_E= 1μA, I_C=0

μA

I_CBO

V_CB= 45 V , I_E=0

V_EB= 4V, I_C=0

0.1

600

μA

Emitter cut-off current

I_EBO

h_FE(1)

h_FE(2)

V_CE(sat)

V_BE(sat)

V_BE

V_CE= 1V, I_C= 100mA

V_CE= 1V, I_C= 500mA

I_C= 500mA, I_B= 50mA

V_CE= 1 V, I_C= 500mA

V_CB=10V ,f=1MHz

100

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Base-emitter voltage

0.7

1.2

Collecter capactiance

C_ob

_CE= 5 V,

I_C= 10mA

Transition frequency

f_T

100

MHz

f=100MHz

CLASSIFICATION OF h_FE

(1)

Rank

Range

Marking

BC817-16

BC817-25

160-400

BC817-40

100-250

250-600

JinYu

semiconductor

www.htsemi.com

Date:2011/05

中文翻译

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