Datasheet > BC808A-40

BC808A-40

更新时间： 2024-11-25 01:07:11

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描述
PNP Transistors

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中文翻译

获取价格

数据手册

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BC808A-40 数据手册

SMD Type

Transistors

PNP Transistors

BC808A (KC808A)

SOT-23

Unit: mm

+0.1

-0.1

2.9

0.4

+0.1

-0.1

Features

For general AF applications.

High collector current.

High current gain.

+0.1

-0.1

+0.05

-0.01

Low collector-emitter saturation voltage.

0.95

0.1

+0.1

-0.1

1.9

● Complementary NPN type available(BC818A)

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current (DC)

Peak collector current

Base current

Symbol

VCBO

VCEO

VEBO

Rating

-30

Unit

-25

-5

-500

-1

ICM

-100

310

Total power dissipation

Storage temperature

Junction temperature

Ptot

Tstg

-65 to +150

150

Electrical Characteristics Ta = 25

Parameter

Symbol

VCBO

Test conditions

Min

-30

-25

-5

Typ

Max

Unit

Collector to base breakdown voltage

Collector to emitter breakdown voltage

Emitter to base breakdown voltage

IC = -10 µA, IE = 0

IC = -10 mA, IB = 0

IE = -10 µA, IC = 0

VCB = -25 V, IE = 0

VCEO

VEBO

ICBO

-100

-50

Collector cutoff current

VCB = -25 V, IE = 0 , TA = 150

VEB = -4 V, IC = 0

Emitter cutoff current

BC808A-16

IEBO

hFE

-100

250

400

630

-0.7

-1.2

100

160

250

160

250

350

DC current gain *

IC = -100 mA, VCE = -1 V

BC808A-25

BC808A-40

Collector saturation voltage *

Base to emitter voltage *

Collector-base capacitance

Emitter-base capacitance

Transition frequency

VCE(sat) IC = -500 mA, IB = -50 mA

VBE(sat) IC = -500 mA, IB = -50 mA

CCb

Ceb

VCB = -10 V, f = 1 MHz

VEB = -0.5 V, f = 1 MHz

IC = -50 mA, VCE = -5 V, f = 100 MHz

200

MHz

* Pulsed: PW

350 us, duty cycle

■ Classification of hfe

Type

Range

Marking

BC808A-16

BC808A-25

160-400

BC808A-40

250-630

100-250

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