Datasheet > BC808

BC808

更新时间： 2024-10-15 18:10:07

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	329K
描述
SOT-23

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中文翻译

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数据手册

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BC808 数据手册

BC808

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to BC818

 High Collector Current

 Low Collector-emitter saturation voltage

 High current gain

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

Unit

Collector-Base Voltage

-30

-25

Collector-Emitter Voltage

Emitter-Base Voltage

-5

Collector Current

Collector Power Dissipation

-800

300

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

500

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=-100uA，I_E=0

I =-10mA I =0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-30

-25

-5

V(BR)CEO

V(BR)EBO

I_CBO

，

I_E= -100uA，I_C=0

-0.1

630

V_CB=-25V, I_E=0

Emitter cut-off current

I_EBO

uA V_EB=-4V, I_C=0

V_CE=-1V, I_C=-100mA

h_FE1

100

DC current gain

V_CE=-1V, I_C=-300mA

I_C=-500mA，I_B=-50mA

V_CE=-1V, I_C=-300mA

V_CE=-5V,I_C=-10mA,f=50

V_CE=-10V, I_E=0, f=1

h_FE2

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE)

0.7

1.2

Transition frequency

f_T

100

MHz

Collector output capacitance

C_ob

MHz

CLASSIFICATION OF h_FE

Rank

Range

Marking

BC808-16

100-250

BC808-25

160-400

BC808-40

250-630

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与BC808相关器件

型号	品牌	获取价格	描述	数据表
BC808.16	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC808.16BK	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon,
BC808.16TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon,
BC808.16TR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon,
BC808.25	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 25V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC808.25BK	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon,
BC808.25LT1G	ONSEMI	获取价格	General Purpose Transistors
BC808.25TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon,
BC808.25TR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 25V V(BR)CEO, 1-Element, PNP, Silicon,
BC808.40	CENTRAL	获取价格	Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23,