Datasheet > BC807W

BC807W

更新时间： 2024-11-18 18:09:35

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
4页	503K
描述
SOT-323

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中文翻译

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数据手册

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BC807W 数据手册

BC807W

BIPOLAR TRANSISTOR (PNP)

FEATURES

 Complementary to BC817W

 High Collector Current

 Epitaxial planar die construction

 High current gain

 Surface Mount device

SOT-323

MECHANICAL DATA



Case: SOT-323

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Symbol

V_CBO

V_CEO

V_EBO

Value

-50

Unit

Collector-Base Voltage

Collector-Emitter Voltage

-45

Emitter-Base Voltage

-5

Collector Current

Collector Power Dissipation

-500

200

°C/W

°C

Thermal Resistance From Junction To Ambient

Junction Temperature

R_θJA

625

150

Storage Temperature

TSTG

-55 ~+150

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

I_C=-10uA，I_E=0

V(BR)CBO

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

-50

-45

-5

V(BR)CEO

V(BR)EBO

I_CBO

I_C=-10mA，I_B=0

I_E=-1uA，I_C=0

V_CB=-20V, I_E=0

-0.1

600

Emitter cut-off current

I_EBO

uA V_EB=-5V, I_C=0

V_CE=-1V, I_C=-100mA

V_CE=-1V, I_C=-500mA

h_FE1

100

DC current gain

h_FE2

Collector-emitter saturation voltage

Base-emitter voltage

V_CE(sat)

V_BE(ON)

f_T

-0.7

-1.2

I_C=-500mA，I_B=-50mA

V_CE=-1V,I_C=-500mA

V_CE=-5V,I_C=-10mA,f=100

Transition frequency

MHz

V_CB= -10V, I_E=0, f=1

MHz

Collector output capacitance

C_ob

CLASSIFICATION OF h_FE

Rank

BC807-16W

100-250

BC807-25W

160-400

BC807-40W

250-600

Range

Marking

1 / 4

©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD

E-mail:hkt@heketai.com

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