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BC807W

更新时间: 2024-02-26 17:25:31
品牌 Logo 应用领域
安世 - NEXPERIA 开关光电二极管晶体管
页数 文件大小 规格书
13页 311K
描述
45 V, 500 mA PNP general-purpose transistorsProduction

BC807W 技术参数

生命周期:Obsolete包装说明:,
Reach Compliance Code:unknown风险等级:5.57
最大集电极电流 (IC):1 A配置:Single
最小直流电流增益 (hFE):100极性/信道类型:PNP
子类别:Other Transistors表面贴装:YES
Base Number Matches:1

BC807W 数据手册

 浏览型号BC807W的Datasheet PDF文件第2页浏览型号BC807W的Datasheet PDF文件第3页浏览型号BC807W的Datasheet PDF文件第4页浏览型号BC807W的Datasheet PDF文件第5页浏览型号BC807W的Datasheet PDF文件第6页浏览型号BC807W的Datasheet PDF文件第7页 
BC807W series  
45 V, 500 mA PNP general-purpose transistors  
Rev. 8 — 1 July 2022  
Product data sheet  
1. General description  
PNP general-purpose transistors in a very small SOT323 (SC-70) Surface-Mounted Device (SMD)  
plastic package.  
Table 1. Product overview  
Type number  
Package  
Nexperia  
SOT323  
NPN complement  
JEDEC  
JEITA  
BC807W  
-
SC-70  
BC817W  
BC807-16W  
BC807-25W  
BC807-40W  
BC817-16W  
BC817-25W  
BC817-40W  
2. Features and benefits  
High current  
Three current gain selections  
3. Applications  
General-purpose switching and amplification  
4. Quick reference data  
Table 2. Quick reference data  
Symbol  
VCEO  
IC  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
V
collector-emitter voltage  
collector current  
peak collector current  
DC current gain  
BC807W  
open base; Tamb = 25 °C  
Tamb = 25 °C  
-
-
-
-
-
-
-45  
-500  
-1  
mA  
A
ICM  
single pulse; tp ≤ 1 ms; Tamb = 25 °C  
hFE  
VCE = -1 V; IC = -100 mA Tamb = 25 °C [1]  
100  
100  
160  
250  
-
-
-
-
600  
250  
400  
600  
BC807-16W  
[1]  
[1]  
[1]  
BC807-25W  
BC807-40W  
[1] pulsed; tp ≤ 300 μs; δ ≤ 0.02  
 
 
 
 
 

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