Datasheet > BC807V

BC807V

更新时间： 2024-09-26 18:06:27

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RECTRON		/
页数	文件大小	规格书
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描述
Package / Case : SOT-23;Mounting Style : SMD/SMT;Power Rating : 0.31 W;Transistor Polarity : PNP;VCEO : 45 V;VCBO : 50 V;VEBO : 5 V;Max Collector Current : 0.5 A;DC Collector/Base Gain hfe Min : 60;DC Current Gain hFE Max : 600;Certified (AEC-Q101...etc) : AEC-Q101

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BC807V 数据手册

BC807V

BC808V

Small Signal Transistors (PNP)

FEATURES

SOT-23

♦

PNP Silicon Epitaxial Planar Transistors

for switching, AF driver and amplifier

applications.

.122 (3.1)

.118 (3.0)

.016 (0.4)

Top View

Especially suited for automatic insertion

in thick- and thin-film circuits.

♦

These transistors are subdivided into three groups -16,

-25 and -40 according to their current gain.

As complementary types, the NPN transistors BC817

and BC818 are recommended.

.037(0.95)

♦

P/N suffix V means AEC-Q101 qualified, e.g:BC807V

Halogen-free

MECHANICAL DATA

.102 (2.6)

.094 (2.4)

Case: SOT-23 Plastic Package

Weight: approx. 0.008 g

Marking code

.016 (0.4) .016 (0.4)

Dimensions in inches and (millimeters)

Type

Marking

Pin configuration

1 = Base, 2 = Emitter, 3 = Collector.

BC807-16

-25

-40

BC808-16

-25

-40

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS_{Ratings at}

ambient temperature unless otherwise specified

25 °C

Symbol

Value

Unit

Collector-Emitter Voltage

BC807

BC808

–V

CES

BC807

BC808

–V

CEO

Collector-Base Voltage

–V

CBO

Emitter-Base Voltage

Collector Current

EBO

–I

500

°C

Peak Collector Current

Peak Base Current

Peak Emitter Current

1000

200

1000

310¹⁾

150

Power Dissipation at T = 50 °C

tot

Junction Temperature

Storage Temperature Range

¹⁾Device on fiberglass substrate, see layout

–65 to +150

°C

2022-03/114

REV:A

12 3 4 5 6 7

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