Datasheet > BC807S-C

BC807S-C

更新时间： 2024-09-26 01:07:55

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3页	107K
描述
General Purpose Transistors

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数据手册

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BC807S-C 数据手册

SEMICONDUCTOR

BC807S

TECHNICAL DATA

GeneralPurposeTransistors

PNPSilicon

FEATURE

Collector current capability I_C= -800 mA.

Collector-emitter voltage V_CEO(max) = -45 V.

General purpose switching and amplification.

NPN complement : BC817 Series.

SOT–23

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

BC807S-A

5A1

3000/Tape&Reel

BC807S-B

BC807S-C

H5B

5C1

3000/Tape&Reel

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current

–45

–50

–5.0

–800

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

P_D

T_A

= 25°C

225

1.8

mW/°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P_D

556

°C/W

Alumina Substrate, (2) T_A

Derate above 25°C

= 25°C

300

2.4

mW/°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

°C/W

°C

T _J

, T ^stg

–55 to +150

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2008. 01. 09

Revision No : 0

1/3

12 3

中文翻译

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