Datasheet > BC807N3

BC807N3

更新时间： 2024-09-25 04:08:59

品牌	Logo	应用领域
全宇昕 - CYSTEKEC		晶体晶体管
页数	文件大小	规格书
4页	184K
描述
General Purpose PNP Epitaxial Planar Transistor

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数据手册

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BC807N3 数据手册

Spec. No. : C905N3

Issued Date : 2003.07.29

Revised Date : 2005.05.10

Page No. : 1/4

CYStech Electronics Corp.

General Purpose PNP Epitaxial Planar Transistor

BC807N3

Description

• The BC807N3 is designed for general purpose switching and amplification applications. It is housed in

the SOT-23/SC-59 package which is designed for low power surface mount applications.

• Low V_CE(sat)

• High switching speed.

• Complementary to BC817N3

Equivalent Circuit

Outline

BC807N3

SOT-23

B：Base

C：Collector

E：Emitter

Absolute Maximum Ratings (Ta=25°C)

Parameter

Symbol

Limits

Unit

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

VCBO

VCEO

VEBO

-50

-45

-5

-500

Collector Current

°C/W

°C

Power Dissipation @TA=25℃

225 (Note 1)

556 (Note 1)

150

Thermal Resistance, Junction to Ambient

Junction Temperature

RθJA

Tstg

Storage Temperature

-55~+150

Note 1:When mounted on a FR-5 board with area measuring 1.0×0.75×0.062 in.

BC807N3

CYStek Product Specification

12 3 4

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