Datasheet > BC807F-16

BC807F-16

更新时间： 2024-11-14 04:03:23

品牌	Logo	应用领域
可天士 - KODENSHI		/
页数	文件大小	规格书
4页	268K
描述
TRANSISTOR,BJT,PNP,35V V(BR)CEO,800MA I(C),SOT-23VAR

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BC807F-16 数据手册

BC807F

PNP Silicon Transistor

Descriptions

PIN Connection

• High current application

• Switching application

Features

• Suitable for AF-Driver stage and low power

output stages

SOT-23F

• Complementary Pair with BC817F

Ordering Information

Type NO.

Marking

Package Code

LA □ □

BC807F

SOT-23F

①

② ③

①Device Code ②hFE Rank ③Year&Week Code

Absolute maximum ratings

(Ta=25°C)

Characteristic

Symbol

V_CBO

V_CEO

V_EBO

I_C

Ratings

-50

Unit

Collector-Base voltage

Collector-Emitter voltage

Emitter-base voltage

Collector current

-35

-5

-800

200

°C

Collector dissipation

Junction temperature

Storage temperature

P_C

T_j

150

T_stg

-55~150

°C

Electrical Characteristics

(Ta=25°C)

Characteristic

Symbol

BV_CEO

Test Condition

Min. Typ. Max. Unit

Collector-Emitter breakdown voltage

Base-Emitter turn on voltage

Collector-Emitter saturation voltage

Collector cut-off current

I_C=-1mA, I_B=0

-35

V_BE(ON)

V_CE(sat)

I_CBO

V_CE=-1V, I_C=-300mA

I_C=-500mA, I_B=-50mA

V_CB=-25V, I_E=0

-1.2

-700

-100

630

100

DC current gain

V_CE=-1V, I_C=-100mA

h_FE

V_CB=-5V, I_E=10mA

f=100MHz

Transition frequency

f_T

100

MHz

Collector output capacitance

C_ob

V_CB=-10V, I_E=0, f=1MHz

* : h_FErank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630

KSD-T5C083-000

12 3 4

中文翻译

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