Datasheet > BC80740-5CZ

BC80740-5CZ

更新时间： 2024-11-24 21:54:15

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描述
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR

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数据手册

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BC80740-5CZ 数据手册

SOT23 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

BC807

ISSUE 3 – MARCH 2001

PARTMARKING DETAILS

BC80716 –

BC80725 –

BC80740 –

5AZ

5BZ

5CZ

COMPLEMENTARY TYPE

BC817

SOT23

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

-50

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

-45

-5

Peak Pulse Current

-1

Continuous Collector Current

Base Current

I_C

-500

-100

-200

330

°C

I_B

Peak Base Current

I_BM

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

P_tot

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector Cut-Off

Current

I_CBO

-0.1

-0.5

_CB=-20V, I_E=0

_CB=-20V, I_E=0, T_amb=150°C

µA

Emitter Cut-Off Current I_EBO

-10

_EB=-5V, I_C=0

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

-700 mV

I_C=-500mA, I_B=-50mA*

Base-Emitter

Saturation Voltage

V_BE(on)

-1.2

I_C=-500mA, V_CE=-1V*

Static Forward Current h_FE

Transfer Ratio

BC80716

BC80725

100

160

250

400

600

I_C=-100mA, V_CE=-1V*

I_C=-500mA, V_CE=-1V*

BC80740

All bands

Transition Frequency

f_T

100

8.0

MHz I_C=-10mA, V_CE=-5V

f=35MHz

Output Capacitance

C_obo

V_CB=-10V f=1MHz

*Measured under pulsed conditions.

Spice parameter data is available upon request for these devices

tba

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