Datasheet > BC807

BC807

更新时间： 2024-09-28 22:27:23

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
2页	52K
描述
General Purpose Transistors(PNP Silicon)

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数据手册

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BC807 数据手册

LESHAN RADIO COMPANY, LTD.

GeneralPurposeTransistors

PNP Silicon

BC807-16LT1

BC807-25LT1

BC807-40LT1

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Symbol

V _CEO

V _CBO

V _EBO

I _C

Value

–45

Unit

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

–50

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

–5.0

–500

mAdc

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR– 5 Board, (1)

T_A= 25°C

P _D

225

1.8

mW/°C

°C/W

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

R _θJA

P _D

556

Alumina Substrate, (2) T_A= 25°C

Derate above 25°C

300

2.4

mW/°C

°C/W

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

R _θJA

417

T _J, T _stg

–55 to +150

°C

DEVICE MARKING

BC807–16LT1 = 5A; BC807–25LT1 = 5B; BC807–40LT1 = 5C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I_C= –10 mA)

V _(BR)CEO

–45

–50

–5.0

—

Collector–Emitter Breakdown Voltage

(V_EB= 0, I C = –10µA)

V _(BR)CES

Emitter–Base Breakdown Voltage

(I_E= –1.0 µA)

V _(BR)EBO

I _CBO

Collector Cutoff Current

(V_CB= –20 V)

—

–100

–5.0

(V_CB= –20 V, T _J= 150°C)

µA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

M1–1/2

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BC807 BC808	UTC	获取价格	PNP
BC807,215	ETC	获取价格	TRANS PNP 45V 0.5A SOT23
BC807.16	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC807.16TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.16TR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.25	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC807.25TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.25TR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.40	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC807.40TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,