Datasheet > BC807

BC807

更新时间： 2023-12-06 20:09:44

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
页数	文件大小	规格书
4页	837K
描述
SOT-23

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中文翻译

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数据手册

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BC807 数据手册

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

SOT-23 Plastic-Encapsulate Transistors

BC807

TRANSISTOR (PNP)

SOT-23

FEATURE

Ldeally suited for automatic insertion

Epitaxial planar die construction

1. BASE

Complementary NPN type available(BC817)

2. EMITTER

3. COLLECTOR

MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Value

Unit

Collector-Base Voltage

-50

Collector-Emitter Voltage

-45

Emitter-Base Voltage

-5

Collector Current

-500

300

417

℃/W

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

P_C

R_ΘJA

Operation Junction and

Storage Temperature Range

T_J,T_stg

-55～+150

℃

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

V_CBO

-50

-45

-5

I_C= -10μA, I_E=0

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

V_CEO

V_EBO

I_CBO

I_C= -10mA, I_B=0

I_E= -1μA, I_C=0

V_CB= -45V, I_E=0

V_EB= -4 V, I_C=0

Collector cut-off current

Emitter cut-off current

-0.1

600

μA

I_EBO

h^FE(1)

hFE(2)

V_CE= -1V, I_C= -100mA

100

DC current gain

V_CE= -1V, I_C= -500mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CE(sat)

I_C=-500mA, I_B= -50mA

I_C= -500mA, I_B= -50mA

-0.7

-1.2

V_BE(sat)

V_CE= -5V, I_C= -10mA

f=100MHz

Transition frequency

100

MHz

f_T

CLASSIFICATION OF h_FE

(1)

Rank

Range

Marking

BC807-16

BC807-25

BC807-40

250-600

100-250

160-400

www.jscj-elec.com

Rev. - 2.0

12 3 4

中文翻译

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BC807 BC808	UTC	获取价格	PNP
BC807,215	ETC	获取价格	TRANS PNP 45V 0.5A SOT23
BC807.16	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC807.16TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.16TR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.25	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC807.25TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.25TR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.40	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC807.40TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,