Datasheet > BC807

BC807

更新时间： 2023-12-06 20:02:21

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	1121K
描述
双极型晶体管

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数据手册

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BC807 数据手册

BC807-16/-25/-40

PNP General Purpose Amplifier

1. BASE

2. EMITTER

3. COLLECTOR

FEATURES

For general AF applications

Complementary NPN type available

BC817

High collector current

High current gain

Low collector-emitter saturation voltage

ORDERING INFORMATION

Type No.

Marking

Package Code

BC807-16

BC807-25

BC807-40

SOT-23

Min

Dim

Max

3.10

1.50

MAXIMUM RATING @ Ta=25℃ unless otherwise specified

2.70

Symbol

Parameter

Value

1.10

Unit

1.0 Typical

0.4 Typical

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_C

-50

0.35

0.48

2.00

0.1

Collector-Emitter Voltage

Emitter-Base Voltage

-45

1.80

0.02

-5

0.1 Typical

Collector Current -Continuous

Total Device Dissipation

Thermal Resistance Junction to Ambient

Junction and Storage Temperature

2.20

2.60

-500

300

℃/W

℃

All Dimensions in mm

P_D

R_θjA

T_j,T_stg

417

-55 to +150

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN TYP

MAX UNIT

Collector-base breakdown voltage

V_(BR)CBO

I_C=-10μA I_E=0

-50

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

V_(BR)CEO

V_(BR)EBO

I_CBO

I_C=-10mA I_B=0

I_E=-10μA I_C=0

V_CB=-25V I_E=0

V_CE=-4V I_C=0

-45

-5

μV

-0.1

μA

Emitter cut-off current

I_EBO

DC current gain

807-16

807-25

807-40

807-16

807-25

807-40

100 160

160 250

250 350

250

400

600

h_FE

V_CE=-1V I_C=-100mA

V_CE=-1V I_C=-300mA

DC current gain

h_FE

100

170

Collector-emitter saturation voltage

Base-emitter saturation voltage

Output capacitance

V_CE(sat)

V_BE(sat)

C_obo

I_C=-500mA I_B=-50mA

V_CB=-10V,f=1.0MHz

-0.7

-1.2

V_CE=-5V,I_C=-10mA

f=100MHz

Transition frequency

f_T

200

MHz

http://www.lgesemi.com

mail:lge@lgesemi.com

Revision:20170701-P1

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BC807.25	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC807.25TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.25TR13	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,
BC807.40	ETC	获取价格	TRANSISTOR \| BJT \| PNP \| 45V V(BR)CEO \| 500MA I(C) \| TO-226AA
BC807.40TR	CENTRAL	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, PNP, Silicon,