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BC807-40E6327 PDF预览

BC807-40E6327

更新时间: 2024-11-27 14:29:27
品牌 Logo 应用领域
英飞凌 - INFINEON 光电二极管晶体管
页数 文件大小 规格书
11页 111K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon

BC807-40E6327 技术参数

是否Rohs认证:符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.27
Is Samacsys:N最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):170JESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):0.33 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管元件材料:SILICON标称过渡频率 (fT):200 MHz
Base Number Matches:1

BC807-40E6327 数据手册

 浏览型号BC807-40E6327的Datasheet PDF文件第2页浏览型号BC807-40E6327的Datasheet PDF文件第3页浏览型号BC807-40E6327的Datasheet PDF文件第4页浏览型号BC807-40E6327的Datasheet PDF文件第5页浏览型号BC807-40E6327的Datasheet PDF文件第6页浏览型号BC807-40E6327的Datasheet PDF文件第7页 
BC807.../BC808...  
PNP Silicon AF Transistor  
For general AF applications  
High collector current  
High current gain  
Low collector-emitter saturation voltage  
Complementary type:  
BC817.../W, BC818.../W (NPN)  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
Marking  
5As  
Pin Configuration  
Package  
BC807-16  
BC807-16W  
BC807-25  
BC807-25W  
BC807-40  
BC807-40W  
BC808-25  
BC808-25W  
BC808-40  
BC808-40W  
1 = B 2 = E 3 = C -  
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23  
SOT323  
SOT23  
SOT323  
SOT23  
SOT323  
SOT23  
SOT323  
SOT23  
SOT323  
5As  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
1 = B 2 = E 3 = C -  
5Bs  
5Bs  
5Cs  
5Cs  
5Fs  
5Fs  
5Gs  
5Gs  
1Pb-containing package may be available upon special request  
2007-06-08  
1

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