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BC807-25W PDF预览

BC807-25W

更新时间: 2024-01-10 10:44:43
品牌 Logo 应用领域
德欧泰克 - DIOTEC /
页数 文件大小 规格书
2页 120K
描述
Surface mount Si-Epitaxial PlanarTransistors

BC807-25W 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.56最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.7 VBase Number Matches:1

BC807-25W 数据手册

 浏览型号BC807-25W的Datasheet PDF文件第2页 
BC 807W / BC 808W  
PNP  
General Purpose Transistors  
Surface mount Si-Epitaxial PlanarTransistors  
PNP  
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage  
Power dissipation – Verlustleistung  
225 mW  
SOT-323  
±0.1  
±0.1  
Plastic case  
2
1
0.3  
Kunststoffgehäuse  
3
Type  
Weight approx. – Gewicht ca.  
0.01 g  
Code  
1
2
Plastic material has UL classification 94V-0  
Gehäusematerial UL94V-0 klassifiziert  
1.3  
Standard packaging taped and reeled  
Standard Lieferform gegurtet auf Rolle  
Dimensions / Maße in mm  
1 = B 2 = E 3 = C  
Maximum ratings (TA = 25C)  
Grenzwerte (TA = 25C)  
BC 807W  
BC 808W  
25 V  
Collector-Emitter-voltage  
Collector-Emitter-voltage  
Collector-Base-voltage  
Emitter-Base-voltage  
Power dissipation – Verlustleistung  
B open  
B shorted - VCES  
E open  
C open  
- VCE0  
45 V  
50 V  
50 V  
30 V  
30 V  
- VCB0  
- VEB0  
Ptot  
5 V  
225 mW 1)  
500 mA  
1000 mA  
200 mA  
1000 mA  
150C  
Collector current – Kollektorstrom (DC)  
Peak Coll. current – Kollektor-Spitzenstrom  
Peak Base current – Basis-Spitzenstrom  
Peak Emitter current – Emitter-Spitzenstrom  
Junction temperature – Sperrschichttemperatur  
Storage temperature – Lagerungstemperatur  
- IC  
- ICM  
- IBM  
IEM  
Tj  
TS  
- 65…+ 150C  
Characteristics, Tj = 25C  
Kennwerte, Tj = 25C  
Min.  
Typ.  
Max.  
DC current gain – Kollektor-Basis-Stromverhältnis  
- VCE = 1 V, - IC = 100 mA  
- VCE = 1 V, - IC = 500 mA  
hFE  
hFE  
100  
40  
600  
BC807W  
BC808W  
Group -16W hFE  
Group -25W hFE  
Group -40W hFE  
100  
160  
250  
160  
250  
400  
250  
400  
600  
- VCE = 1 V, - IC = 100 mA  
1
)
Mounted on P.C. board with 3 mm2 copper pad at each terminal  
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß  
4
01.11.2003  

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