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BC807-25 PDF预览

BC807-25

更新时间: 2024-02-15 14:22:59
品牌 Logo 应用领域
WEITRON 晶体晶体管光电二极管放大器
页数 文件大小 规格书
4页 339K
描述
General Purpose Transistor

BC807-25 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.56最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:45 V配置:SINGLE
最小直流电流增益 (hFE):160JESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:PNP
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICON标称过渡频率 (fT):100 MHz
VCEsat-Max:0.7 VBase Number Matches:1

BC807-25 数据手册

 浏览型号BC807-25的Datasheet PDF文件第2页浏览型号BC807-25的Datasheet PDF文件第3页浏览型号BC807-25的Datasheet PDF文件第4页 
BC807-16/  
BC807-40  
BC807-25  
COLLECTOR  
3
MARKING DIAGRAM  
General Purpose Transistor  
PNP Silicon  
3
1
BASE  
1
2
SOT-23  
2
EMITTER  
( T =25 C unless otherwise noted)  
Maximum Ratings  
A
Symbol  
Rating  
Collector-Emitter Voltage  
Collector-Base Voltage  
Value  
Unit  
V
V
V
-45  
CEO  
V
-50  
CBO  
Emitter-Base VOltage  
V
-5.0  
500  
V
EBO  
Collector Current-Continuous  
I
C
mAdc  
Thermal Characteristics  
Characteristics  
Total Device Dissipation FR-5 Board  
(Note 1.)T =25 C  
A
Derate above 25 C  
Symbol  
Max  
Unit  
(1)  
P
D
mW  
mW/ C  
225  
1.8  
R
θ
JA  
C/W  
Thermal Resistance, Junction to Ambient  
556  
Total Device Dissipation Alumina  
300  
2.4  
Substrate, (Note 2.) T =25 C  
A
mW  
mW/ C  
P
D
Derate above 25 C  
R
θ
C/W  
Thermal Resistance, Junction to Ambient  
Junction and Storage, Temperature  
417  
JA  
T
J,Tstg  
-55 to +150  
C
Device Marking  
BC807-17=5A1 , BC807-25=5B1 , BC807-40=5C1  
1.FR -5=1.0 x 0.75 x 0.062 in.  
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5% alumina.  
WEITRON  
http://www.weitron.com.tw  
Rev.A 16-Dec-08  

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