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BC639D26Z PDF预览

BC639D26Z

更新时间: 2024-02-18 12:03:55
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关晶体管
页数 文件大小 规格书
4页 35K
描述
1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC639D26Z 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:compliant风险等级:5.14
最大集电极电流 (IC):1 A集电极-发射极最大电压:80 V
配置:SINGLE最小直流电流增益 (hFE):40
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
JESD-609代码:e3湿度敏感等级:NOT APPLICABLE
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT APPLICABLE极性/信道类型:NPN
最大功率耗散 (Abs):0.8 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:MATTE TIN端子形式:THROUGH-HOLE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

BC639D26Z 数据手册

 浏览型号BC639D26Z的Datasheet PDF文件第2页浏览型号BC639D26Z的Datasheet PDF文件第3页浏览型号BC639D26Z的Datasheet PDF文件第4页 
BC635/637/639  
Switching and Amplifier Applications  
Complement to BC636/638/640  
TO-92  
1. Emitter 2. Collector 3. Base  
1
NPN Epitaxial Silicon Transistor  
Absolute Maximum Ratings T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Value  
Units  
V
V
V
V
Collector-Emitter Voltage at R =1KΩ  
CER  
BE  
: BC635  
: BC637  
: BC639  
45  
60  
100  
V
V
V
Collector-Emitter Voltage  
: BC635  
CES  
CEO  
EBO  
45  
60  
100  
V
V
V
: BC637  
: BC639  
Collector-Emitter Voltage  
: BC635  
45  
60  
80  
V
V
V
: BC637  
: BC639  
Emitter-Base Voltage  
Collector Current  
5
V
A
I
I
I
1
1.5  
C
Peak Collector Current  
Base Current  
A
CP  
B
100  
mA  
W
°C  
°C  
P
Collector Dissipation  
Junction Temperature  
Storage Temperature  
1
C
T
T
150  
J
-65 ~ 150  
STG  
PW=5ms, Duty Cycle=10%  
Electrical Characteristics T =25°C unless otherwise noted  
a
Symbol  
Parameter  
Test Condition  
Min.  
Typ.  
Max.  
Units  
BV  
Collector-Emitter Breakdown Voltage  
I =10mA, I =0  
CEO  
C
B
: BC635  
: BC736  
: BC639  
45  
60  
80  
V
V
V
I
I
Collector Cut-off Current  
Emitter Cut-off Current  
V
=30V, I =0  
0.1  
0.1  
µA  
µA  
CBO  
CB  
E
V
=5V, I =0  
C
EBO  
EB  
h
h
DC Current Gain  
: All  
V
V
=2V, I =5mA  
25  
40  
40  
25  
FE1  
FE2  
CE  
CE  
C
: BC635  
: BC637/BC639  
: All  
=2V, I =150mA  
250  
160  
C
h
V
=2V, I =500mA  
CE C  
FE3  
V
V
(sat)  
(on)  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
I =500mA, I =50mA  
0.5  
1
V
V
CE  
BE  
C
B
V
=2V, I =500mA  
C
CE  
f
Current Gain Bandwidth Product  
V
=5V, I =10mA,  
100  
MHz  
T
CE  
C
f=50MHz  
©2000 Fairchild Semiconductor International  
Rev. A, February 2000  

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