Datasheet > BC639BU

BC639BU

更新时间： 2022-12-01 21:30:30

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
4页	55K
描述
Transistor,

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数据手册

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BC639BU 数据手册

BC635/637/639

Switching and Amplifier Applications

•

Complement to BC636/638/640

TO-92

1. Emitter 2. Collector 3. Base

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings ^{T =25°C unless otherwise noted}

Symbol

Parameter

Value

Units

Collector-Emitter Voltage at R =1KΩ

CER

: BC635

: BC637

: BC639

100

Collector-Emitter Voltage

: BC635

CES

CEO

EBO

100

: BC637

: BC639

Collector-Emitter Voltage

: BC635

: BC637

: BC639

Emitter-Base Voltage

Collector Current

1.5

Peak Collector Current

Base Current

100

°C

Collector Power Dissipation

Junction Temperature

Storage Temperature

150

-65 ~ 150

STG

• PW=5ms, Duty Cycle=10%

Electrical Characteristics ^{T =25°C unless otherwise noted}

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

Collector-Emitter Breakdown Voltage

I =10mA, I =0

CEO

: BC635

: BC637

: BC639

Collector Cut-off Current

Emitter Cut-off Current

=30V, I =0

0.1

µA

CBO

=5V, I =0

EBO

DC Current Gain

: All

=2V, I =5mA

FE1

FE2

: BC635

: BC637/BC639

: All

=2V, I =150mA

250

160

=2V, I =500mA

CE C

FE3

(sat)

(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I =500mA, I =50mA

0.5

=2V, I =500mA

Current Gain Bandwidth Product

=5V, I =10mA,

100

MHz

f=50MHz

Rev. B2, December 2002

12 3 4

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