Datasheet > BC639-A

BC639-A

更新时间： 2024-01-23 17:33:36

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描述
Transistor

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技术参数
数据手册

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BC639-A 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.92	JESD-609代码：	e0
端子面层：	Tin/Lead (Sn/Pb)	Base Number Matches：	1

BC639-A 数据手册

M C C

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20736 Marilla Street Chatsworth

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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BC639

Micro Commercial Components

Features

•

Complement to BC640

NPN Epitaxial

Silicon Transistors

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Marking: BC639

TO-92

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Value

100

5.0

1.0

-55 to +150

Unit

P_C

T_J

Collector Power Dissipation

Junction Temperature

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=1mAdc,I_B=0)

---

Vdc

Collector-Base Breakdown Voltage

(I_C=100IAdc,I_E=0)

100

Emitter-Base Breakdown Voltage

(I_E=100IAdc,I_C=0)

5.0

---

Vdc

Collector Cutoff Current

(V_CB=30Vdc, I_E=0)

IAdc

0.1

I_EBO

Emitter Cutoff Current

(V_EB=5.0Vdc, I_C=0)

DC Current Gain

---

h_FE

(V_CE=2Vdc, I_C=5mAdc)

(V_CE=2Vdc, I_C=150mAdc)

(V_CE=2Vdc, I_C=500mAdc)

Collector-Emitter Saturation Voltage

(I_C=500mAdc,I_B=50mAdc)

Base-Emitter Voltage

(I_C=500mAdc, V_CE=2Vdc)

Transition Frequency

(V_CE=5.0Vdc, I_C=50mAdc, f=100MHz)

---

160

---

V_CE(sat)

V_BE

---

0.5

1.0

---

Vdc

MHz

DIMENSIONS

INCHES

MIN

.170

.550

.010

.130

.010

MIN

DIM

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

f_T

.190

.590

.020

.160

.104

4.33

4.30

13.97

0.36

3.30

2.44

100

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Revision: 2

2006/05/26

1 of 2

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