Datasheet > BC639

BC639

更新时间： 2024-09-26 14:54:31

品牌	Logo	应用领域
先科 - SWST		晶体管
页数	文件大小	规格书
5页	255K
描述
小信号晶体管

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数据手册

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BC639 数据手册

BC635...BC639

NPN Silicon Epitaxial Planar Transistor

Features

• Medium Power Transistors

• Low Collector Emitter Saturation Voltage

Applications

• For driver stages of audio / video amplifiers

1. Emitter 2. Collector 3. Base

TO-92 Plastic Package

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_CBO

Value

Unit

Collector Base Voltage

BC635

BC637

BC639

BC635

BC637

BC639

100

Collector Emitter Voltage

V_CEO

Emitter Base Voltage

Collector Current

V_EBO

I_C

I_CM

I_B

1.5

Peak Collector Current

Base Current

100

℃

Peak Base Current

Power Dissipation

I_BM

P_tot

T_j

200

830

Junction Temperature

Storage Temperature Range

150

T_stg

- 55 to + 150

℃

Thermal Characteristics

Parameter

Symbol

R_θJA

Max.

150

Unit

Thermal Resistance from Junction to Ambient

℃/W

Dated: 26/09/2022 Rev: 04

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