BC639-10-AP

更新时间： 2024-02-03 08:30:22

品牌	Logo	应用领域
美微科 - MCC		晶体晶体管
页数	文件大小	规格书
3页	322K
描述
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

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技术参数
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BC639-10-AP 技术参数

生命周期：	Obsolete	Reach Compliance Code：	compliant
风险等级：	5.84	Is Samacsys：	N
Base Number Matches：	1

BC639-10-AP 数据手册

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

BC639-10

BC639-16

Micro Commercial Components

Features

Lead Free Finish/RoHS Compliant ("P" Suffix designates

NPN Epitaxial

Silicon Transistors

RoHS Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking: BC639

TO-92

Maximum Ratings

Symbol

V_CEO

V_CBO

V_EBO

I_C

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current

Value

100

5.0

1.0

-55 to +150

Unit

P_C

T_J

Collector Power Dissipation

Junction Temperature

T_STG

Storage Temperature

-55 to +150

Electrical Characteristics @ 25°C Unless Otherwise Specified

Symbol

Parameter

Min

Typ

Max

Units

OFF CHARACTERISTICS

V_(BR)CEO

V_(BR)CBO

V_(BR)EBO

I_CBO

Collector-Emitter Breakdown Voltage

(I_C=1mAdc,I_B=0)

---

Vdc

Collector-Base Breakdown Voltage

(I_C=100IAdc,I_E=0)

100

Emitter-Base Breakdown Voltage

(I_E=100IAdc,I_C=0)

5.0

---

Vdc

Collector Cutoff Current

(V_CB=30Vdc, I_E=0)

IAdc

0.1

I_EBO

Emitter Cutoff Current

(V_EB=5.0Vdc, I_C=0)

DC Current Gain

---

h_FE

(V_CE=2Vdc, I_C=5mAdc)

(V_CE=2Vdc, I_C=150mAdc)

---

160

---

BC639-10

BC639-16

(V_CE=2Vdc, I_C=150mAdc)

(V_CE=2Vdc, I_C=500mAdc)

100

---

250

---

DIMENSIONS

V_CE(sat)

V_BE

Collector-Emitter Saturation Voltage

(I_C=500mAdc,I_B=50mAdc)

Base-Emitter Voltage

(I_C=500mAdc, V_CE=2Vdc)

Transition Frequency

INCHES

---

0.5

1.0

---

Vdc

MHz

DIM

MIN

.170

.550

.010

.130

.096

MAX

MIN

4.33

4.30

13.97

0.36

3.30

2.44

MAX

4.83

14.97

0.56

3.96

2.64

NOTE

.190

.590

.020

.160

.104

f_T

(V_CE=5.0Vdc, I_C=50mAdc, f=100MHz)

100

www.mccsemi.com

Revision: A

2011/01/01

1 of 3

12 3

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