Datasheet > BC638

BC638

更新时间： 2024-11-14 14:54:27

品牌	Logo	应用领域
鲁光 - LGE		双极型晶体管
页数	文件大小	规格书
2页	790K
描述
双极型晶体管

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中文翻译

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技术参数
数据手册

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BC638 技术参数

极性：	PNP	Collector-emitter breakdown voltage：	80
Collector Current - Continuous：	1	DC current gain - Min：	63
DC current gain - Max：	250	Transition frequency：	100
Package：	TO-92	Storage Temperature Range：	-55-150
class：	Transistors

BC638 数据手册

BC636/BC638/BC640

Transistor(PNP)

1. EMITTER

2. COLLECTOR

3. BASE

TO-92

Features

High current transistors

MAXIMUM RATINGS (T_A=25℃ unless otherwise noted)

Symbol

V_CBO

Parameter

Value

-45

Units

Collector-Base Voltage

BC636

BC638

BC640

BC636

BC638

BC640

-60

-100

-45

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

-60

-80

Dimensions in inches and (millimeters)

V_EBO

I_C

-5

Collector Current -Continuous

Collector Power Dissipation

Thermal Resistance, junction to Ambient

Junction Temperature

-1

P_C

0.83

150

-55-150

R_ӨJA

T_j

℃/W

℃

T_stg

Storage Temperature

℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

I_C=-100μA,I_E=0

BC636

BC638

BC640

BC636

BC638

BC640

-45

-60

-100

-45

-60

-80

-5

Collector-base breakdown voltage

V_(BR)CBO

I_C=-1mA,I_B=0

Collector-emitter breakdown voltage

V_(BR)CEO

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

V_(BR)EBOI_E=-100μA,I_C=0

I_CBO

I_EBO

V_CB=-30V,I_E=0

-0.1

μA

V_EB= -5V,I_C=0

- 0.1

h_FE(1)

h_FE(2)

h_FE(3)

V_CE(sat)

V_BE

V_CE= -2V,I_C=- 5mA

V_CE= -2V,I_C=- 150mA

V_CE= -2V,I_C=- 500mA

I_C=- 500mA,I_B= -50mA

V_CE= -2V,I_C= -500mA

DC current gain

250

Collector-emitter saturation voltage

Base-emitter voltage

-0.5

- 1

Transition frequency

f_T

V_CE= -5V,I_C=- 50mA,f=100MHz

100

MHz

CLASSIFICATION OF h_FE(2)

BC636-10

63-160

BC636-16, BC638-16, BC640-16

100-250

Rank

Range

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Revision:20170701-P1

mail:lge@lgesemi.com

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