Datasheet > BC637RLRA

BC637RLRA

更新时间： 2024-11-13 19:54:03

品牌	Logo	应用领域
安森美 - ONSEMI		晶体管
页数	文件大小	规格书
4页	92K
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数据手册

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BC637RLRA 数据手册

BC637, BC639, BC639-16

High Current Transistors

NPN Silicon

Features

• These are Pb−Free Devices*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

BASE

Collector - Emitter Voltage

Vdc

CEO

CBO

EBO

BC637

BC639

EMITTER

Collector - Base Voltage

Vdc

BC637

BC639

Emitter - Base Voltage

5.0

1.0

Vdc

Adc

Collector Current − Continuous

TO−92

CASE 29

STYLE 14

Total Device Dissipation @ T = 25°C

625

5.0

mW/°C

Derate above 25°C

Total Device Dissipation @ T = 25°C

800

Derate above 25°C

mW/°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

STRAIGHT LEAD

BULK PACK

BENT LEAD

TAPE & REEL

AMMO PACK

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction−to−Ambient

Thermal Resistance, Junction−to−Case

MARKING DIAGRAMS

83.3

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

63x

BC63

9−16

AYWW G

= 7 or 9

= Assembly Location

= Year

WW = Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Publication Order Number:

February, 2011 − Rev. 1

BC637/D

12 3 4

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