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BC637RL1G PDF预览

BC637RL1G

更新时间: 2024-11-13 08:49:39
品牌 Logo 应用领域
安森美 - ONSEMI 晶体小信号双极晶体管
页数 文件大小 规格书
4页 89K
描述
High Current Transistors

BC637RL1G 技术参数

是否无铅: 不含铅生命周期:End Of Life
零件包装代码:TO-92包装说明:CYLINDRICAL, O-PBCY-T3
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
Factory Lead Time:1 week风险等级:5.21
Is Samacsys:N最大集电极电流 (IC):1 A
集电极-发射极最大电压:60 V配置:SINGLE
最小直流电流增益 (hFE):40JEDEC-95代码:TO-226
JESD-30 代码:O-PBCY-T3JESD-609代码:e1
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):200 MHzBase Number Matches:1

BC637RL1G 数据手册

 浏览型号BC637RL1G的Datasheet PDF文件第2页浏览型号BC637RL1G的Datasheet PDF文件第3页浏览型号BC637RL1G的Datasheet PDF文件第4页 
BC637, BC639, BC639-16  
High Current Transistors  
NPN Silicon  
Features  
These are PbFree Devices*  
http://onsemi.com  
COLLECTOR  
2
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
Unit  
BASE  
Collector - Emitter Voltage  
V
V
V
Vdc  
CEO  
CBO  
EBO  
BC637  
BC639  
60  
80  
1
EMITTER  
Collector - Base Voltage  
Vdc  
BC637  
BC639  
60  
80  
Emitter - Base Voltage  
5.0  
1.0  
Vdc  
Adc  
Collector Current Continuous  
I
C
TO92  
CASE 29  
STYLE 14  
Total Device Dissipation @ T = 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Derate above 25°C  
Total Device Dissipation @ T = 25°C  
P
800  
12  
mW  
C
D
1
Derate above 25°C  
mW/°C  
1
2
2
3
3
Operating and Storage Junction  
Temperature Range  
T , T  
J
55 to +150  
°C  
stg  
STRAIGHT LEAD  
BULK PACK  
BENT LEAD  
TAPE & REEL  
AMMO PACK  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, JunctiontoAmbient  
Thermal Resistance, JunctiontoCase  
R
q
JA  
MARKING DIAGRAMS  
R
83.3  
q
JC  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
BC  
63x  
BC63  
916  
AYWW G  
G
AYWW G  
G
x
A
Y
= 7 or 9  
= Assembly Location  
= Year  
WW = Work Week  
G
= PbFree Package  
(Note: Microdot may be in either location)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
*For additional information on our PbFree strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
© Semiconductor Components Industries, LLC, 2011  
1
Publication Order Number:  
February, 2011 Rev. 1  
BC637/D  

BC637RL1G 替代型号

型号 品牌 替代类型 描述 数据表
BC637G ONSEMI

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High Current Transistors
BC637 ONSEMI

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High Current Transistors
BC637 FAIRCHILD

功能相似

NPN EPITAXIAL SILICON TRANSISTOR

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