Datasheet > BC636/D

BC636/D

更新时间： 2024-11-10 23:34:47

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High Current Transistor PNP

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SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

636

–45

638

640

–80

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

Unit

Vdc

Adc

CASE 29–04, STYLE 14

TO–92 (TO–226AA)

CEO

CBO

EBO

–60

–5.0

–0.5

Collector Current — Continuous

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage*

(I = –10 mAdc, I = 0)

Vdc

(BR)CEO

BC636

BC638

BC640

–45

–60

–80

—

Collector–Base Breakdown Voltage

(I = –100 µAdc, I = 0)

(BR)CBO

BC636

BC638

BC640

–45

–60

–80

—

Emitter–Base Breakdown Voltage

(I = –10 Adc, I = 0)

–5.0

—

(BR)EBO

Collector Cutoff Current

CBO

= –30 Vdc, I = 0)

—

–100

–10

nAdc

µAdc

= –30 Vdc, I = 0, T = 125°C)

1. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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