BC560CRLRE

更新时间： 2024-11-04 12:59:47

品牌	Logo	应用领域
摩托罗拉 - MOTOROLA		晶体小信号双极晶体管开关
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4页	111K
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数据手册

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BC560CRLRE 数据手册

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by BC559/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol

BC559 BC560

Unit

Vdc

CASE 29–04, STYLE 17

TO–92 (TO–226AA)

CEO

CBO

EBO

–30

–45

–50

Vdc

–5.0

Vdc

Collector Current — Continuous

–100

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watt

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(I = –10 mAdc, I = 0)

Vdc

(BR)CEO

BC559

BC560

–30

–45

—

Collector–Base Breakdown Voltage

(I = –10 µAdc, I = 0)

(BR)CBO

BC559

BC560

–30

–50

—

Emitter–Base Breakdown Voltage

(I = –10 Adc, I = 0)

–5.0

—

(BR)EBO

Collector Cutoff Current

CBO

= –30 Vdc, I = 0)

—

–15

–5.0

nAdc

µAdc

= –30 Vdc, I = 0, T = +125°C)

Emitter Cutoff Current

—

–15

nAdc

EBO

= –4.0 Vdc, I = 0)

REV 1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

12 3 4

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