Datasheet > BC557A-G

BC557A-G

更新时间： 2024-11-04 03:36:19

品牌	Logo	应用领域
WEITRON		/
页数	文件大小	规格书
5页	1947K
描述
Transistor

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中文翻译

获取价格

数据手册

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BC557A-G 数据手册

BC556, A/B

BC557, A/B/C

BC558, A/B/C

PNP General Purpose Transistor

COLLECTOR

* "G" Lead(Pb)-Free

TO-92

BASE

EMITTER

Maximum Ratings _{( T =25 C unless otherwise noted)}

℃

Rating

Symbol

BC556

-65

BC557

-45

BC558

-30

Unit

Vdc

mAdc

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

ECO

-80

-5

-50

-5

100

-30

-5

CBO

EBO

Collector Current Continuous

THERMAL CHARACTERISTICS

Characteristics

Symbol

Max

Unit

BC556

BC557

BC558

Total Device Dissipation

625

mW/ ℃C

℃

Alumina Substrate, T = 25 C

BC556

BC557

BC558

Junction and Storage, Temperature

-55 to +150

J, Tstg

℃

ELECTRICAL CHARACTERISTICS

Characteristics

Min

Max

Unit

Symbol

OFF CHARACTERISTICS

BC556

BC557

BC558

-65

-45

-30

Collector-Emitter Breakdown Voltage

(BR)CEO

Vdc

(l = 2 mAdc. l =0)

BC556

BC557

-80

-50

-30

Collector-Base Breakdown Voltage

(BR)CBO

(l = 100 µAdc. l =0)

BC558

BC556

BC557

Emitter-Base Breakdown Voltage

-5

Vdc

(BR)EBO

(l = 100 µAdc. l =0)

BC558

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