BC546/547/548/549/550
Switching and Applications
•
•
•
High Voltage: BC546, V
Low Noise: BC549, BC550
Complement to BC556 ... BC560
=65V
CEO
TO-92
1. Collector 2. Base 3. Emitter
1
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T =25°C unless otherwise noted
a
Symbol
Parameter
Value
Units
V
V
V
Collector-Base Voltage : BC546
80
50
30
V
V
V
CBO
: BC547/550
: BC548/549
Collector-Emitter Voltage : BC546
65
45
30
V
V
V
CEO
EBO
: BC547/550
: BC548/549
Emitter-Base Voltage
Collector Current (DC)
: BC546/547
: BC548/549/550
6
5
V
V
I
100
500
mA
mW
°C
C
P
Collector Power Dissipation
Junction Temperature
Storage Temperature
C
T
T
150
J
-65 ~ 150
°C
STG
Electrical Characteristics T =25°C unless otherwise noted
a
Symbol
Parameter
Collector Cut-off Current
DC Current Gain
Test Condition
Min.
Typ.
Max.
15
Units
I
V
V
=30V, I =0
nA
CBO
CB
CE
E
h
=5V, I =2mA
110
800
FE
C
V
V
V
(sat) Collector-Emitter Saturation Voltage I =10mA, I =0.5mA
90
200
250
600
mV
mV
CE
BE
BE
C
B
I =100mA, I =5mA
C
B
(sat)
(on)
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
I =10mA, I =0.5mA
700
900
mV
mV
C
B
I =100mA, I =5mA
C
B
V
=5V, I =2mA
580
660
700
720
mV
mV
CE
CE
C
V
V
V
V
V
=5V, I =10mA
C
f
Current Gain Bandwidth Product
Output Capacitance
=5V, I =10mA, f=100MHz
300
3.5
9
MHz
pF
T
CE
CB
EB
CE
C
C
C
=10V, I =0, f=1MHz
6
ob
ib
E
Input Capacitance
=0.5V, I =0, f=1MHz
pF
C
NF
Noise Figure
: BC546/547/548
: BC549/550
: BC549
=5V, I =200µA
2
10
4
4
dB
dB
dB
dB
C
f=1KHz, R =2KΩ
1.2
1.4
1.4
G
V
=5V, I =200µA
CE
C
: BC550
R =2KΩ, f=30~15000MHz
3
G
h
Classification
FE
Classification
A
B
C
h
110 ~ 220
200 ~ 450
420 ~ 800
FE
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001