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BC548TAR

更新时间: 2024-02-11 23:50:09
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 放大器
页数 文件大小 规格书
2页 24K
描述
Small Signal Bipolar Transistor, 0.1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, LEAD FREE, TO-92, 3 PIN

BC548TAR 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
Reach Compliance Code:not_compliant风险等级:5.92
最大集电极电流 (IC):0.1 A配置:Single
最小直流电流增益 (hFE):110JESD-609代码:e0
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W子类别:Other Transistors
表面贴装:NO端子面层:Tin/Lead (Sn/Pb)
标称过渡频率 (fT):300 MHz

BC548TAR 数据手册

 浏览型号BC548TAR的Datasheet PDF文件第2页 
Discr ete P OWER & Sign a l  
Tech n ologies  
BC548  
BC548A  
BC548B  
BC548C  
TO-92  
E
B
C
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 300 mA. Sourced from  
Process 10. See PN100A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCES  
VEBO  
IC  
Collector-Emitter Voltage  
30  
30  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
500  
mA  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BC548 / A / B / C  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
C/W  
°
JA  
1997 Fairchild Semiconductor Corporation  
548-ABC, Rev B  

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