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BC548BRL PDF预览

BC548BRL

更新时间: 2024-11-09 03:55:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
4页 168K
描述
100mA, 30V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, TO-226AA, 3 PIN

BC548BRL 数据手册

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ON Semiconductort  
BC546  
BC546B  
BC547A  
BC547B  
BC547C  
BC548B  
BC548C  
Amplifier Transistors  
NPN Silicon  
MAXIMUM RATINGS  
Rating  
Collector–Emitter Voltage  
Collector–Base Voltage  
Emitter–Base Voltage  
Symbol BC546 BC547 BC548  
Unit  
Vdc  
V
CEO  
V
CBO  
V
EBO  
65  
80  
45  
50  
30  
30  
Vdc  
6.0  
100  
Vdc  
Collector Current — Continuous  
I
C
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
625  
5.0  
mW  
mW/°C  
A
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
1
Operating and Storage Junction  
Temperature Range  
T , T  
–55 to +150  
°C  
J
stg  
2
3
CASE 29–04, STYLE 17  
TO–92 (TO–226AA)  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
200  
Unit  
°C/W  
°C/W  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Case  
R
q
JA  
JC  
COLLECTOR  
1
R
83.3  
q
2
BASE  
3
EMITTER  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector–Emitter Breakdown Voltage  
(I = 1.0 mA, I = 0)  
BC546  
BC547  
BC548  
V
V
V
65  
45  
30  
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
C
B
Collector–Base Breakdown Voltage  
(I = 100 µAdc)  
C
BC546  
BC547  
BC548  
80  
50  
30  
Emitter–Base Breakdown Voltage  
BC546  
BC547  
BC548  
6.0  
6.0  
6.0  
(I = 10 mA, I = 0)  
E
C
Collector Cutoff Current  
(V = 70 V, V = 0)  
I
CES  
BC546  
BC547  
BC548  
BC546/547/548  
0.2  
0.2  
0.2  
15  
15  
15  
4.0  
nA  
CE  
BE  
(V = 50 V, V = 0)  
CE  
BE  
(V = 35 V, V = 0)  
CE  
BE  
(V = 30 V, T = 125°C)  
µA  
CE  
A
Semiconductor Components Industries, LLC, 2001  
242  
Publication Order Number:  
May, 2001 – Rev. 3  
BC546/D  

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TRANSISTOR | BJT | NPN | 30V V(BR)CEO | 100MA I(C) | TO-92