Order this document
by BC546/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
1
2
BASE
3
EMITTER
1
MAXIMUM RATINGS
2
3
BC
BC
BC
546
547
548
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Symbol
Unit
Vdc
CASE 29–04, STYLE 17
TO–92 (TO–226AA)
V
CEO
V
CBO
V
EBO
65
45
30
80
50
30
Vdc
6.0
100
Vdc
Collector Current — Continuous
I
C
mAdc
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
A
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
1.5
12
Watt
mW/°C
C
Operating and Storage Junction
Temperature Range
T , T
–55 to +150
°C
J
stg
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
200
Unit
°C/W
°C/W
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
R
R
JA
JC
83.3
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I = 1.0 mA, I = 0)
BC546
BC547
BC548
V
65
45
30
—
—
—
—
—
—
V
V
V
(BR)CEO
C
B
Collector–Base Breakdown Voltage
(I = 100 µAdc)
C
BC546
BC547
BC548
V
80
50
30
—
—
—
—
—
—
(BR)CBO
Emitter–Base Breakdown Voltage
BC546
BC547
BC548
V
6.0
6.0
6.0
—
—
—
—
—
—
(BR)EBO
(I = 10 A, I = 0)
E
C
Collector Cutoff Current
I
CES
(V
CE
(V
CE
(V
CE
(V
CE
= 70 V, V
= 50 V, V
= 35 V, V
= 0)
= 0)
= 0)
BC546
BC547
BC548
BC546/547/548
—
—
—
—
0.2
0.2
0.2
—
15
15
15
4.0
nA
BE
BE
BE
= 30 V, T = 125°C)
µA
A
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Motorola, Inc. 1996
1