BC488B

更新时间： 2024-09-24 06:41:35

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管
页数	文件大小	规格书
6页	78K
描述
High Current Transistors PNP Silicon

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BC488B 数据手册

BC488B

High Current Transistors

PNP Silicon

Features

• Pb−Free Package is Available*

http://onsemi.com

COLLECTOR

MAXIMUM RATINGS

Rating

Symbol

Value

−60

Unit

Vdc

Adc

BASE

Collector - Emitter Voltage

Collector - Base Voltage

Emitter-Base Voltage

CEO

CBO

EBO

−60

EMITTER

−4.0

−1.0

Collector Current − Continuous

Total Device Dissipation

@ T = 25°C

625

5.0

mW/°C

Derate above 25°C

TO−92

CASE 29

STYLE 17

Total Device Dissipation

@ T = 25°C

Derate above 25°C

1.5

mW/°C

Operating and Storage Junction

Temperature Range

T , T

−55 to +150

°C

stg

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MARKING DIAGRAM

488B

AYWW G

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance,

Junction−to−Ambient

200

°C/W

Thermal Resistance,

Junction−to−Case

83.3

°C/W

BC488B = Device Code

= Assembly Location

= Year

= Work Week

= Pb−Free Package

(Note: Microdot may be in either location)

ORDERING INFORMATION

†

Device

Package

Shipping

BC488BRL1

TO−92

2000/Tape & Reel

BC488BRL1G

TO−92

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

September, 2005 − Rev. 1

BC488B/D

12 3 4 5 6

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