Datasheet > BC347-TO-92

BC347-TO-92

更新时间： 2024-11-29 06:41:35

品牌	Logo	应用领域
江苏长电/长晶 - CJ		晶体晶体管
页数	文件大小	规格书
3页	334K
描述
TRANSISTOR (NPN)

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中文翻译

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数据手册

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BC347-TO-92 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

BC347 TRANSISTOR (NPN)

TO— 92

FEATURES

Power dissipation

1.EMITTER

2. BASE

P_CM: 0.3 W（Tamb=25℃）

Collector current

I_CM:

0.1 A

3. COLLECTOR

Collector-base voltage

V_(BR)CBO: 50 V

1 2 3

Operating and storage junction temperature range

T_J，T_stg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS（Tamb=25℃

unless otherwise specified）

Parameter

Test

conditions

MIN

TYP

MAX

UNIT

Symbol

(BR)CB

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Ic= 100μA ， I_E=0

I_C= 1mA , I_B=0

I_E= 100μA， I_C=0

V_CB=50V, I_E=0

(BR)CE

(BR)EBO

I_CBO

I_CEO

I_EBO

0.1

450

0.3

μA

Collector cut-off current

V_CE=35V, I_B=0

Emitter cut-off current

V_EB= 3V, I_C=0

DC current gain

h_FE

V_CE=5 V, I_C= 2mA

I_C= 10mA, I_B= 1mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

V_CEsat

V_BEsat

Transition frequency

V_CE=5V,I_C=10mA, f=30MHz

125

MHz

f_T

12 3

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