BC337A

更新时间： 2024-01-08 03:54:53

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管
页数	文件大小	规格书
2页	100K
描述
NPN Medium Power Transistor

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中文翻译

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技术参数
数据手册
替代型号

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BC337A 技术参数

是否Rohs认证：	不符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.63
JESD-609代码：	e0	峰值回流温度（摄氏度）：	NOT SPECIFIED
端子面层：	Tin/Lead (Sn/Pb)	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

BC337A 数据手册

September 2007

BC337A

NPN Medium Power Transistor

•

This device is designed for general purpose amplifier application at collector currents to 800mA.

Sourced from process 38.

TO-92

1. Collector 2. Base 3. Emitter

Absolute Maximum Ratings T_C=25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

Collector-Emitter Voltage

Emitter-Base Voltage

V_CES

V_EBO

I_C

Collector Current (DC)

800

°C

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 ~ 150

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T_a=25°C unless otherwise noted

Symbol

Parameter

Max.

Units

P_D

Total Device Dissipation

Derate above 25°C

625

5.0

mW/°C

R_θJC

R_θJA

Thermal Resistance, Junction to Case

83.3

200

°C/W

Thermal Resistance, Junction to Ambient

*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.

Electrical Characteristics T_C=25°C unless otherwise noted

Symbol

BV_CEO

BV_CES

BV_EBO

I_EBO

Parameter

Collector-Emitter Breakdown Voltage

Collector-Emitter Cutoff Voltage

Emitter-Base Breakdown Voltage

Emitter Cut-off Current

Test Condition

I_C= 10mA

Min. Typ. Max.

Units

I_C= 100μA

I_E= 100μA

V_EB= 5V

μA

V_CB= 20V, T = 25 °C

T = 150 °C

0.1

I_CBO

h_FE

Collector Cut-off Current

DC Current Gain

μA

V_CE= 1V, I_C= 100mA

V_CE= 1V, I_C= 500mA

100

400

V_CE(sat)

V_BE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

I_C= 500 mA, I_B= 50 mA

V_CE= 5V, I_C= 2mA

0.7

1.2

Notes:

1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

3.These ratings are based on a maximum junction temperature of 150degrees C.

www.fairchildsemi.com

BC337A Rev. 1.0.0

中文翻译

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BC337A 替代型号

型号	品牌	替代类型	描述	数据表
BC33725TA	ONSEMI	功能相似	NPN Bipolar Transistor
BC33716BU	FAIRCHILD	功能相似	NPN Epitaxial Silicon Transistor
BC337-40	DIOTEC	功能相似	Si-Epitaxial PlanarTransistors

与BC337A相关器件

型号	品牌	获取价格	描述	数据表
BC337-A	DIODES	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
BC337A-10	ETC	获取价格	BJT
BC337A-16	ETC	获取价格	BJT
BC337A-25	ETC	获取价格	BJT
BC337A-40	ETC	获取价格	BJT
BC337A-AMMO	NXP	获取价格	TRANSISTOR 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, BIP General Purpose Smal
BC337ABU	FAIRCHILD	获取价格	Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
BC337AD	ZETEX	获取价格	Transistor
BC337AD26Z	TI	获取价格	NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
BC337ADWP	ZETEX	获取价格	Small Signal Bipolar Transistor, 45V V(BR)CEO, 1-Element, NPN, Silicon, 0.026 X 0.031 INCH

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