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BC337-40 PDF预览

BC337-40

更新时间: 2024-11-27 14:54:19
品牌 Logo 应用领域
CENTRAL /
页数 文件大小 规格书
3页 311K
描述
45V,800mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN General Purpose Amplifier/Switch

BC337-40 数据手册

 浏览型号BC337-40的Datasheet PDF文件第2页浏览型号BC337-40的Datasheet PDF文件第3页 
BC337 SERIES  
www.centralsemi.com  
SILICON  
NPN TRANSISTORS  
DESCRIPTION:  
The CENTRAL SEMICONDUCTOR BC337 series  
devices are silicon NPN transistors designed for general  
purpose amplifier and switching applications.  
MARKING: FULL PART NUMBER  
TO-92 CASE  
MAXIMUM RATINGS: (T =25°C)  
SYMBOL  
UNITS  
V
A
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
V
50  
45  
CBO  
CEO  
EBO  
V
V
5.0  
Continuous Collector Current  
Power Dissipation  
I
800  
mA  
mW  
°C  
C
P
625  
D
Operating and Storage Junction Temperature  
Thermal Resistance  
T , T  
-65 to +150  
200  
J
stg  
Θ
°C/W  
°C/W  
JA  
JC  
Thermal Resistance  
Θ
83.3  
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)  
A
SYMBOL  
TEST CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
I
I
I
V
V
V
=45V  
=30V  
=4.0V  
100  
100  
100  
nA  
CES  
CBO  
EBO  
CE  
CB  
EB  
nA  
nA  
V
BV  
BV  
BV  
I =100μA  
50  
45  
CES  
CEO  
EBO  
CE(SAT)  
BE(ON)  
FE  
C
I =10mA  
V
C
I =10μA  
5.0  
V
E
V
V
I =500mA, I =50mA  
0.7  
1.2  
V
C
B
V
=1.0V, I =300mA  
V
CE  
CE  
CE  
CE  
CE  
CE  
CE  
CB  
C
h
h
h
h
h
V
V
V
V
V
V
V
=1.0V, I =100mA (BC337)  
100  
100  
160  
250  
60  
630  
250  
400  
630  
C
=1.0V, I =100mA (BC337-16)  
FE  
C
=1.0V, I =100mA (BC337-25)  
FE  
C
=1.0V, I =100mA (BC337-40)  
FE  
C
=1.0V, I =300mA  
FE  
C
f
=5.0V, I =10mA, f=100MHz  
210  
15  
MHz  
pF  
T
C
C
=10V, I =0, f=1.0MHz  
ob  
E
R2 (6-August 2014)  

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