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BC337-40 PDF预览

BC337-40

更新时间: 2024-11-04 06:41:35
品牌 Logo 应用领域
江苏长电/长晶 - CJ 晶体晶体管
页数 文件大小 规格书
1页 34K
描述
TO-92 Plastic-Encapsulate Transistors

BC337-40 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.58最大集电极电流 (IC):0.8 A
配置:Single最小直流电流增益 (hFE):250
最高工作温度:150 °C极性/信道类型:NPN
最大功率耗散 (Abs):0.625 W子类别:Other Transistors
表面贴装:NO标称过渡频率 (fT):210 MHz
Base Number Matches:1

BC337-40 数据手册

  
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD  
TO-92 Plastic-Encapsulate Transistors  
BC337,-16,-25,-40  
TRANSISTOR (NPN)  
TO-92  
BC338, -16,-25,-40  
FEATURES  
1. COLLECTOR  
2. BASE  
Power dissipation  
PCM:  
0.625  
W (Tamb=25)  
3. EMITTER  
Collector current  
ICM:  
0.8  
A
1 2 3  
Collector-base voltage  
VCBO  
:
BC337 50  
BC338 30  
V
V
Operating and storage junction temperature range  
TJ, Tstg: -55to +150℃  
ELECTRICAL CHARACTERISTICS (Tamb=25unless otherwise specified)  
Parameter  
Symbol  
Test conditions  
MIN  
TYP  
MAX  
UNIT  
VCBO  
Ic= 100µA, IE=0  
Collector-base breakdown voltage  
50  
30  
V
V
BC337  
BC338  
IC= 10 mA , IB=0  
IE= 10µA, IC=0  
Collector-emitter breakdown voltage  
VCEO  
45  
25  
V
V
BC337  
BC338  
VEBO  
ICBO  
5
V
Emitter-base breakdown voltage  
Collector cut-off current  
V
CB= 45 V, IE=0  
0.1  
0.1  
µA  
µA  
BC337  
V
CB= 25V, IE=0  
BC338  
Collector cut-off current  
ICEO  
VCE= 40 V, IB=0  
CE= 20 V, IB=0  
0.2  
0.2  
µA  
µA  
BC337  
BC338  
V
IEBO  
VEB= 4 V, IC=0  
0.1  
µA  
Emitter cut-off current  
DC current gain  
100  
100  
160  
250  
60  
630  
250  
400  
630  
BC337/BC338  
hFE(1)  
VCE=1V, IC= 100mA  
BC337-16/BC338-16  
BC337-25/BC338-25  
BC337-40/BC338-40  
HFE(2)  
VCE=1V, IC= 300mA  
VCE(sat)  
IC=500 mA, IB= 50 mA  
0.7  
1.2  
V
V
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
VBE(sat)  
IC= 500 mA, IB=50 mA  
VCE= 5V, IC= 10mA  
210  
MHz  
Transition frequency  
f T  
f = 100MHz  

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