Datasheet > BC337-25D75Z

BC337-25D75Z

更新时间： 2024-11-28 14:47:59

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		开关晶体管
页数	文件大小	规格书
7页	311K
描述
1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

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技术参数
数据手册

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BC337-25D75Z 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.01	Is Samacsys：	N
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	45 V
配置：	SINGLE	最小直流电流增益 (hFE)：	160
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	NPN
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
标称过渡频率 (fT)：	100 MHz	Base Number Matches：	1

BC337-25D75Z 数据手册

BC337-16

BC337-25

TO-92

NPN General Purpose Amplifier

This device is designed for use as general purpose amplifiers

and switches requiring collector currents to 500 mA. Sourced from

Process 12. See TN3019A for characteristics.

Absolute Maximum Ratings*

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V_CEO

V_CES

V_EBO

I_C

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

5.0

Collector Current - Continuous

Operating and Storage Junction Temperature Range

1.0

-55 to +150

T_J, T_stg

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics

TA = 25°C unless otherwise noted

Symbol

Characteristic

Max

Units

BC337-16 / BC337-25

P_D

Total Device Dissipation

Derate above 25 C

625

5.0

mW/ C

Thermal Resistance, Junction to Case

83.3

R_θ

C/W

Thermal Resistance, Junction to Ambient

200

R_θ

C/W

1997 Fairchild Semiconductor Corporation

33716-25, Rev B

12 3 4 5 6 7

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