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BC337-25D26Z PDF预览

BC337-25D26Z

更新时间: 2024-11-29 03:43:43
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 311K
描述
1000 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

BC337-25D26Z 数据手册

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BC337-16  
BC337-25  
TO-92  
E
B
C
NPN General Purpose Amplifier  
This device is designed for use as general purpose amplifiers  
and switches requiring collector currents to 500 mA. Sourced from  
Process 12. See TN3019A for characteristics.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCES  
VEBO  
IC  
Collector-Emitter Voltage  
45  
50  
V
V
V
A
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
1.0  
-55 to +150  
C
°
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
BC337-16 / BC337-25  
PD  
Total Device Dissipation  
Derate above 25 C  
625  
5.0  
mW  
mW/ C  
°
°
Thermal Resistance, Junction to Case  
83.3  
Rθ  
C/W  
°
JC  
Thermal Resistance, Junction to Ambient  
200  
Rθ  
C/W  
°
JA  
1997 Fairchild Semiconductor Corporation  
33716-25, Rev B  

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